We have highlighted an underlying physical concept behind the BTBT process that has been mostly overlooked in literature. It has been shown that ignoring the dual nature of electrons and holes during the BTBT phenomenon can not only lead to substantially erroneous results but also to misleading...
Collaborators
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Senior Research ScientistNASA Ames Research Center -
Intel Fellow and director of Circuit Technology ResearchIntel Corporation -
TI FellowTexas Instruments -
Senior ResearcherAdvanced Industrial Science and Technology, Japan -
Infineon Technologies
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Manager of Design GroupAdvanced Industrial Science and Technology, Japan -
Senior Device EngineerNational Semiconductor
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Principal EngineerSanDisk Corporation -
Senior ResearcherFujitsu Laboratories, Japan -
Senior Research EngineerInstitue of Microelectronics, Singapore -
Chief ScientistMentor Graphics Corporation
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Leader of the CMOS and Novel Devices GroupNational Institute of Standards and Technology (NIST)