Carbon Nanoelectronics

  1. A Comparative Scaling Analysis of Metallic and Carbon Nanotube Interconnections for Nanometer Scale VLSI Technologies
    N. Srivastava and K. Banerjee
    Proceedings of the 21st International VLSI Multilevel Interconnect Conference (VMIC), pp. 393-398, Hawaii, Sept. 29-Oct. 2, 2004 []
  2. Performance Analysis of Carbon Nanotube Interconnects for VLSI Applications
    N. Srivastava and K. Banerjee
    IEEE International Conference on Computer-Aided Design (ICCAD), pp. 383-390, San Jose, CA, November 6-10, 2005
  3. Carbon Nanotube Interconnects: Implications for Performance, Power Dissipation and Thermal Management
    N. Srivastava, R. V. Joshi and K. Banerjee
    IEEE International Electron Devices Meeting (IEDM), pp. 257-260, Washington DC, Dec. 5-7, 2005
  4. Emerging Interconnect Technologies based on Carbon Nanotubes
    N. Srivastava and K. Banerjee
    IEEE International Symposium on Quality Electronic Design (ISQED), San Jose, CA, March 27-29, 2006
    INVITED TUTORIAL
  5. Are Carbon Nanotubes the Future of VLSI Interconnections?
    K. Banerjee and N. Srivastava
    ACM Design Automation Conference (DAC), pp. 809-814, San Francisco, CA, July 24-28, 2006
  6. Can Carbon Nanotubes Extend the Lifetime of On-Chip Electrical Interconnections?
    K. Banerjee, S. Im and N. Srivastava
    IEEE Conference on Nano Networks (Nano-Net), Lausanne, Switzerland, Sept. 14-16, 2006
  7. Prospects for Carbon Nanotube Interconnects
    K. Banerjee
    23rd Advanced Metallization Conference (AMC), San Diego, CA, Oct. 16-19, 2006
  8. Carbon Nanotubes: An Emerging Alternative for On-Chip VLSI Interconnects
    K. Banerjee
    Future Directions in IC and Package Design Workshop, (FDIP), Scottsdale, AZ, Oct. 22, 2006
  9. What are Carbon Nanotubes?
    K. Banerjee
    ACM SIGDA Newsletter, Vol. 36, No. 21, Nov. 2006
  10. Can Carbon Nanotubes Extend the Lifetime of On-Chip VLSI Interconnections?
    K. Banerjee
    IEEE-CPMT Electrical Design of Advanced Packaging Systems (EDAPS), Shanghai, China, December 17-19, 2006
  11. SoC Communication Architectures: Technology, Current Practice, Research and Trends
    K. Banerjee, L. Benini, N. Dutt, K. Lahiri and S. Pasricha
    VLSI Design Conference, Bangalore, India, Jan. 6-10, 2007
    INVITED TUTORIAL
  12. Nano-enhanced Architectures: Using Carbon Nanotube Interconnects in Cache Design
    B. Agrawal, N. Srivastava, F. T. Chong, K. Banerjee and T. Sherwood
    4th Workshop on Non-Silicon Computing (NSC-4) held in conjunction with the International Symposium on Computer Architecture (ISCA'07 workshop), San Diego, California, June 2007
  13. Carbon Nanotube Vias: A Reality Check
    H. Li, N. Srivastava, J-F. Mao, W-Y. Yin and K. Banerjee
    IEEE International Electron Devices Meeting (IEDM), pp. 207-210, Washington DC, Dec. 10-12, 2007
  14. Modeling and Analysis of Intrinsic Gate Capacitance for Carbon Nanotube Array Based Devices Considering Variaion in Screening Effect and Diameter
    C. Kshirsagar and K. Banerjee
    IEEE International Semiconductor Device Research Symposium (ISDRS), pp. 1-2, College Park, MD, December 12-14, 2007
  15. Performance Analysis of Multi-Walled Carbon Nanotube Based Interconnects
    H. Li, W-Y. Yin, J-F. Mao and K. Banerjee
    IEEE International Semiconductor Device Research Symposium (ISDRS), pp. 1-2, College Park, MD, December 12-14, 2007
  16. High-Frequency Effects in Carbon Nanotube Interconnects
    K. Banerjee
    12th IEEE Workshop on Signal Propagation on Interconnects (SPI), Avignon, Pope's Palace, France, May 12-15, 2008
    KEYNOTE
  17. Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects
    Hong Li, Wen-Yan Yin, Kaustav Banerjee, and Jun-Fa Mao
    IEEE Transactions on Electron Devices, Vol. 55, No. 6, pp. 1328-1337, 2008
  18. Analysis and Implications of Parasitic and Screening Effects on the High-Frequency/RF Performance of Tunneling-Carbon Nanotube FETs
    C. Kshirsagar, M. N. El-Zeftawi and K. Banerjee
    IEEE/ACM Design Automation Conference (DAC), Anaheim, CA, June 8-13, pp. 250-255, 2008
  19. Carbon Nanotube Interconnects for Next Generation ICs
    K. Banerjee
    Summer School on Nanoelectronic Circuits and Tools, EPFL, Lausanne, Switzerland, July 14-18, 2008
    INVITED
  20. Current Status and Future Perspectives of Carbon Nanotube Interconnects
    K. Banerjee, H. Li and N. Srivastava
    IEEE NANO: 8th International Conference on Nanotechnology, pp. 432-436, Arlington, TX, August 18-21, 2008
  21. Current Status and Future Perspectives of Carbon Nanotube Interconnects
    K.Banerjee, H. Li and N. Srivastava
    IEEE EMC Symposium, Detroit, MI, August 18-22, 2008. (INVITED)
  22. Accurate Intrinsic Gate Capacitance Model for Carbon Nanotube-Array Based FETs Considering Screening Effect
    Chaitanya Kshirsagar, Hong Li, Tom Kopley, and Kaustav Banerjee
    IEEE Electron Device Letters, Vol. 29, No. 12, pp. 1408-1411, Dec. 2008
  23. Graphene Nano-Ribbon (GNR) Interconnects: A Genuine Contender or a Delusive Dream?
    C. Xu, H. Li and K. Banerjee
    IEEE International Electron Devices Meeting (IEDM), pp. 201-204, San Francisco, Dec. 15-17, 2008
  24. High-Frequency Effects in Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design
    H. Li and K. Banerjee
    IEEE International Electron Devices Meeting (IEDM), pp. 525-528, San Francisco, Dec. 15-17, 2008
  25. Carbon Nanomaterials for Next Generation Interconnects and Passives: Physics, Status and Prospects
    K. Banerjee
    18th Materials for Advanced Metallization Conference (MAM), Grenoble, France, March 8-11
  26. Graphene Based Transistors: Physics, Status and Future Perspectives
    K. Banerjee, Y. Khatami, C. Kshirsagar, S. H. Rasouli
    International Symposium on Physical Design (ISPD), San Diego, CA, March 29-April 1
  27. Carbon Nanomaterials for Next Generation Interconnects and Passives: Physics, Status and Prospects
    K. Banerjee
    International Electrostatic Discharge Workshop (IEW), Lake Tahoe, CA, May 18-21, 2009
    KEYNOTE
  28. Scaling Analysis of Graphene Nanoribbon Tunnel-FETs
    Y. Khatami and K. Banerjee
    Device Research Conference (DRC), pp. 217-218, Penn State University, University Park, PA, June 22-24, pp. 217-218, 2009
  29. On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnections
    Navin Srivastava, Hong Li, Franz Kreupl, and Kaustav Banerjee
    IEEE Transactions on Nanotechnology, Vol. 8, No. 4, pp. 542-559, July 2009
  30. Graphene Based Nanomaterials for VLSI Interconnect and Energy-Storage Applications
    K. Banerjee
    ACM/IEEE System Level Interconnect Prediction (SLIP), San Francisco, CA, July 26, 2009
    INVITED PANEL
  31. Modeling, Analysis and Design of Graphene Nano-Ribbon Interconnects
    Chuan Xu, Hong Li, and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol.56, No.8, pp. 1567-1578, Aug 2009
  32. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status and Prospects
    K. Banerjee, H. Li, N. Srivastava and C. Xu
    Progress in Electromagnetics Research Symposium (PIERS), Moscow, Russia, August 18-21, 2009
  33. Prospects of Carbon Nanomaterials in VLSI for Interconnections and Energy Storage
    K. Banerjee, H. Li and C. Xu
    31st Annual EOS/ESD Symposium, Anaheim, CA, Aug 30-Sept 4, 2009
  34. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status and Prospects
    Hong Li, Chuan Xu, Navin Srivastava, and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Special Issue on Compact Interconnect Models for Gigascale Integration, Vol. 56, No. 9, pp. 1799-1821, Sep 2009.
    INVITED AND HIGHLIGHTED ON THE JOURNAL COVERPAGE
  35. High-Frequency Analysis of Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design
    Hong Li and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol. 56, No. 10, pp. 2202-2214, Oct 2009
  36. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status and Prospects
    K. Banerjee, H. Li and C. Xu
    International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Oct. 7-9, 2009
  37. Carbon Based Active and Passive Devices for Next-Generation ICs
    K. Banerjee, H. Dadgour, Y. Khatami, H. Li, C. Xu
    Global COE International Symposium on Silicon Nano Devices in 2030: Prospects by World’s Leading Scientists, Oct. 13-14, Tokyo, 2009
  38. Green Electronics using Graphene based Nanomaterials
    K. Banerjee
    Emerging Technologies in Solid State Devices Workshop, Baltimore, MD, December 5 - 6, 2009
  39. Compact AC Modeling and Analysis of Cu, W, and CNT based Through-Silicon Vias (TSVs) in 3-D ICs
    C. Xu, H. Li, R. Suaya, K. Banerjee
    IEEE International Electron Devices Meeting (IEDM), Baltimore, Dec. 6-9, 2009
  40. Carbon Nanomaterial based Interconnects and Passives for Next-Generation ICs
    K. Banerjee, H. Li and C. Xu
    XVth International Workshop on Physics of Semiconductor Devices (IWPSD), New Delhi India, Dec. 15-19, 2009
  41. Single wall carbon nanotube-Aptamer Based Biosensors
    S. H. Varghese, Y. Nakajima, Y. Yoshida, T. Maekawa, T. Hanajiri, K. Banerjee, D. S. Kumar
    7 th International Symposium on Bioscience and Nanotechnology, Tokyo, Japan, December 20-21, 2009.
  42. Carbon Based Active and Passive Devices for Next-Generation ICs
    K. Banerjee, W. Liu, H. Li, Y.Khatami, and C. Xu
    Ultimate Limit of Integration in Silicon (ULIS), Glasgow, Scotland, March 17-19, 2010.
    INVITED--PLENARY
  43. Carbon based Nanomaterials as Interconnects and Passives for Next-Generation VLSI and 3-D ICs
    K. Banerjee
    IEEE WMED, Boise, Idaho, April 16, 2010
    INVITED TUTORIAL
  44. AC Conductance Modeling and Analysis of Graphene Nanoribbon Interconnects
    D. Sarkar, C. Xu, H. Li, and K. Banerjee
    in Proceedings 13th IEEE International Interconnect Technology Conference (IITC), San Francisco, CA, June 7-9, pp.1-3, 2010.
  45. Graphene Based Heterostructure Tunnel-FETs for Low-Voltage/High-Performance ICs
    Y. Khatami, M. Krall, H. Li., C. Xu., K. Banerjee
    in Proceedings 68th Device Research Conference (DRC), Notre Dame, IN, June 21-23, 2010, pp. 65-66.
  46. Carbon Nanomaterials: The Ideal Interconnect Technology for Next-Generation ICs
    Hong Li, Chuan Xu, and Kaustav Banerjee
    IEEE Design and Test of Computers, Special Issue on Emerging Interconnect Technologies for Gigascale Integration, pp. 20-31, July/August, 2010.
    INVITED
  47. Prospects of Carbon Nanomaterials for Next-Generation Green Electronics
    K. Banerjee, H. Li, C. Xu, Y. Khatami, H.F. Dadgour, D. Sarkar and W. Liu
    IEEE NANO, Kintex, Seoul, August 17-20, pp. 1-6, 2010.
  48. Carbon-Based Green Electronics
    Kaustav Banerjee
    Materials Research Society (MRS) Fall Symposium, Boston, MA, Nov. 29-Dec. 3, 2010. (INVITED)
  49. Electron-hole Duality During Band-to-Band Tunneling Process in Graphene-Nanoribbon Tunnel-Field-Effect Transistors
    Deblina Sarkar, Michael Krall, and Kaustav Banerjee
    Applied Physics Letters, Vol. 97, No. 26, p. 263109, Dec 27, 2010.
  50. Factors Influencing the Synthesis of Monolayer and Bilayer Graphene on Copper using Chemical Vapor Deposition
    Wei Liu, Hong Li, Chuan Xu and Kaustav Banerjee
    38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38), San Diego, CA, January 16-20, 2011.
  51. High-Frequency Behavior of Graphene-Based Interconnects—Part I: Impedance Modeling
    Deblina Sarkar, Chuan Xu, Hong Li, and Kaustav Banerjee
    IEEE Transactions on. Electron Devices, vol. 58, no. 3, pp. 843-852, March 2011.
  52. High-Frequency Behavior of Graphene-Based Interconnects—Part II: Impedance Analysis and Implications for Inductor Design
    Deblina Sarkar, Chuan Xu, Hong Li, and Kaustav Banerjee
    IEEE Transactions on Electron Devices, vol. 58, no. 3, pp. 853-859, March 2011.
  53. Carbon Based Green Electronics
    K. Banerjee
    ACM/IEEE International Workshop on Timing Issues in the Specification and Synthesis of Digital Systems (TAU 2011), Santa Barbara, CA, March 31-April 1, 2011.
    KEYNOTE
  54. Carbon Nanotube Vias: Does Ballistic Electron-Phonon Transport Imply Improved Performance and Reliability?
    Hong Li, Navin Srivastava, Jun-Fa Mao, Wen-Yan Yin and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol. 58, no. 8, pp. 2689-2701, Aug. 2011.
  55. Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper using Chemical Vapor Deposition
    Wei Liu, Hong Li, Chuan Xu, Yasin Khatami and Kaustav Banerjee
    CARBON, Vol. 49, No. 13, pp. 4122-4130, Nov. 2011.
  56. Future of Carbon Nanomaterials as Next-Generation Interconnects and Passives Devices
    Hong Li, Chuan Xu, Deblina Sarkar, Yasin Khatami, Wei Liu and Kaustav Banerjee
    IEEE Electrical Design of Advanced Packaging & Systems (EDAPS) Symposium, Hangzhou, China, Dec 12-14, 2011
  57. Graphene Based Green Electronics
    K. Banerjee
    IEEE Electrical Design of Advanced Packaging & Systems (EDAPS) Symposium, Hangzhou, China, Dec 12-14, 2011.
    KEYNOTE
  58. Graphene Based Green Electronics
    K. Banerjee
    International Workshop on Physics of Semiconductors (IWPSD), IIT-Kanpur, India, Dec 18-22, 2011.
    INVITED TALK
  59. Top Illuminated Inverted Organic UV Photosensors With Single Layer Graphene Electrodes
    Martin Burkhardt, Wei Liu, Christopher G. Shuttle, Kaustav Banerjee, and Michael L. Chabinyc
    Applied Physics Letters, Vol. 101, 033302, 2012.
  60. Metal to Multi-Layer Graphene Contact--Part II: Analysis of Contact Resistance
    Yasin Khatami, Hong Li, Chuan Xu, and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol. 59, No. 9, pp. 2453-2460, 2012.
  61. Metal to Multi-Layer Graphene Contact--Part I: Contact Resistance Modeling
    Yasin Khatami, Hong Li, Chuan Xu, and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol. 59, No. 9, pp. 2444-2452, 2012.
  62. ESD Characterization of Atomically-Thin Graphene
    H. Li, C. Russ, W. Liu, D. Johnsson, H. Gossner and K. Banerjee
    34th Annual EOS/ESD Symposium, pp. 1-8, Tucson, AZ, September 9-14, 2012.
  63. Graphene nanoribbon based negative resistance device for ultra-low voltage digital logic applications
    Yasin Khatami, Jiahao Kang, and Kaustav Banerjee
    Applied Physics Letters, Vol. 102, No.4 , 043114, 2013.
  64. Graphene and Beyond-Graphene 2D-Crystals for Green Electronics
    (INVITED) K. Banerjee, W. Liu, J. Kang, Y. Khatami and D. Sarkar
    18th Silicon Nanoelectronics Workshop, Kyoto, Japan, June 9-10, 2013, pp. 1-2.
  65. Proposal for All-Graphene Monolithic Logic Circuits
    Jiahao Kang, Deblina Sarkar, Yasin Khatami and Kaustav Banerjee
    Applied Physics Letters, Vol. 103, No. 8, 083113, 2013.
  66. Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications – Part II: Characterization
    Hong Li, Wei Liu, Alan M. Cassell, Franz Kreupl and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol. 60, No. 9, pp. 2870-2876, 2013.
  67. Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications – Part I: Process Development
    Hong Li, Wei Liu, Alan M. Cassell, Franz Kreupl and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol. 60, No. 9, pp. 2862-2869, 2013.
  68. 2D Electronics: Graphene and Beyond
    (KEYNOTE) W. Cao, J. Kang, W. Liu, Y. Khatami, D. Sarkar and K. Banerjee
    43rd European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, Sept. 16-20, 2013, pp. 1-8. Slides: []
  69. Prospects of Graphene Electrodes in Photovoltaics
    (INVITED) Y. Khatami, W. Liu, J. Kang and K. Banerjee
    Proc. SPIE 8824, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV, 88240T, September 25, 2013, doi:10.1117/12.2026581.
  70. Prospects of nanoCarbons and Emerging 2D-Crystals for Next-Generation Green Electronics
    (INVITED) K. Banerjee
    Advanced Metallization Conference 2013: 23rd Asian Session, The University of Tokyo, Tokyo, Japan, Oct. 7-10, 2013, pp. 1-2.
  71. 2-Dimensional Tunnel Devices and Circuits on Graphene: Opportunities and Challenges
    Jiahao Kang, Wei Cao, Deblina Sarkar, Yasin Khatami, Wei Liu and Kaustav Banerjee
    3rd Berkeley Symposium on Energy Efficient Electronic Systems, Berkeley, CA, Oct 28-29, 2013, pp. 1-2.
  72. High-Performance Field-Effect-Transistors on Monolayer-WSe2
    (INVITED) W. Liu, W. Cao, J. Kang, and K. Banerjee
    ECS Transactions 58 (7), pp. 281-285, 2013.
  73. Novel Logic Devices based on 2D Crystal Semiconductors: Opportunities and Challenges
    (INVITED) P. Zhao, W-S. Hwang, E-S. Kim, R. Feenstra, G. Gu, J. Kang, K. Banerjee, A. Seabaugh, H. Xing and D. Jena
    IEEE International Electron Devices Meeting (IEDM), Washington DC, Dec. 9-11, 2013, pp. 487-490.
  74. High-Performance Few-Layer-MoS2 Field-Effect-Transistor with Record Low Contact-Resistance
    W. Liu, J. Kang, W. Cao, D. Sarkar, Y. Khatami, D. Jena and K. Banerjee
    IEEE International Electron Devices Meeting (IEDM), Washington DC, Dec. 9-11, 2013, pp. 499-502.
  75. On the Electrostatics of Bernal-Stacked Few-Layer Graphene on Surface Passivated Semiconductors
    Yasin Khatami, Hong Li, Wei Liu and Kaustav Banerjee
    IEEE Transactions on Nanotechnology, Vol. 13, No. 1, pp. 94-100, 2014.
  76. Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene using Chemical Vapor Deposition
    Wei Liu, Stephan Krämer, Deblina Sarkar, Hong Li, Pulickel M. Ajayan, and Kaustav Banerjee
    ACS Chemistry of Materials, Vol. 26, No. 2, pp 907-915, 2014.
  77. Carbon Integrated Electronics
    Hong Li, Yasin Khatami, Deblina Sarkar, Jiahao Kang, Chuan Xu, Wei Liu, and Kaustav Banerjee
    in Intelligent Integrated Systems: Technologies, Devices and Architectures. Ed: S. Deleonibus, Pan Stanford Series on Intelligent Nanosystems, pp. 217-274, April 9, 2014.
  78. Correction to MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors
    Deblina Sarkar, Wei Liu, Xuejun Xie, Aaron Anselmo, Samir Mitragotri and Kaustav Banerjee
    ACS Nano, 2014.
  79. On the Electrostatic-Discharge Robustness of Graphene
    Hong Li, Christian C. Russ, Wei Liu, David Johnsson, Harald Gossner and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol. 61, No. 6, pp. 1920-1928, 2014.
  80. Graphene and beyond-graphene 2D crystals for next-generation green electronics
    (INVITED) Jiahao Kang, Wei Cao, Xuejun Xie, Deblina Sarkar, Wei Liu and Kaustav Banerjee
    Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 908305, June 5, 2014.
  81. Subthreshold-Swing Physics of Tunnel Field-Effect Transistors
    Wei Cao, Deblina Sarkar, Yasin Khatami, Jiahao Kang, and Kaustav Banerjee
    AIP Advances, 4, 067141, June 2014.
  82. Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?
    Wei Cao, Jiahao Kang, Simone Bertolazzi, Andras Kis and Kaustav Banerjee
    IEEE Transactions on Electron Devices, vol. 61, No. 10, pp.3456-3464, 2014.
  83. Graphene Inductors for High-Frequency Applications – Design, Fabrication, Characterization, and Study of Skin Effect
    Xiang Li*, Jiahao Kang*, Xuejun Xie, Wei Liu, Deblina Sarkar, Junfa Mao and Kaustav Banerjee (*equal contributors)
    IEEE International Electron Devices Meeting (IEDM), San Francisco, Dec. 15-17, 2014, pp. 5.4.1–5.4.4.
  84. 2D Crystals and their Heterostructures for Green Electronics
    (INVITED) Kaustav Banerjee
    Proceedings of the 11th Topical Workshop on Heterostructure Microelectronics, Takayama, Japan, Aug 24-26, p. 10-1, 2015.
  85. 2D Crystals for Smart Life
    (INVITED SHORT COURSE) K. Banerjee
    47th International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, Sept. 27-30, 2015.
  86. 2D Semiconductor FETs- Projections and Design for Sub-10 nm VLSI
    Wei Cao, Jiahao Kang, Deblina Sarkar, Wei Liu and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Special Issue to commemorate the 60th anniversary of the IEDM, Vol. 62, No. 11, pp. 3459-3469, 2015.
  87. Electrical Contacts to Two-dimensional Semiconductors
    Adrien Allain, Jiahao Kang, Kaustav Banerjee and Andras Kis
    Nature Materials, Vol. 14, pp. 1195–1205, 2015.
  88. Characterization of FeCl3 Intercalation Doped CVD Few-Layer Graphene
    Wei Liu, Jiahao Kang and Kaustav Banerjee
    IEEE Electron Device Letters, Vol. 37, No. 9, pp. 1246 - 1249, Sept. 2016.
  89. Two-Dimensional Van der Waals Materials
    Pulickel Ajayan, Philip Kim, and Kaustav Banerjee
    Physics Today, Vol. 69, No. 9, pp. 38-44, 2016.
  90. Intercalation Doped Multilayer-Graphene-Nanoribbons for Next-Generation Interconnects
    Junkai Jiang, Jiahao Kang, Wei Cao, Xuejun Xie, Haojun Zhang, Jae Hwan Chu, Wei Liu, and Kaustav Banerjee
    Nano Letters, Vol. 17, No. 3, pp. 1482-1488, 2017.
  91. Characterization of Self-Heating and Current-Carrying Capacity of Intercalation Doped Graphene-Nanoribbon Interconnects
    Junkai Jiang, Jiahao Kang and Kaustav Banerjee
    IEEE International Reliability Physics Symposium (IRPS), Monterey, April 4-6, 2017, pp. 6B.1.1-6B.1.6.