Green Electronics

  1. Modeling and Design of a Low-Voltage SOI Suspended-Gate MOSFET (SG-MOSFET) with a Metal Over-Gate-Architecture
    A. M. Ionescu, V. Pott, R. Fritschi, K. Banerjee, M. J. Declercq, Ph. Renaud, C. Hibert, Ph. Fluckiger and G-A. Racine
    IEEE International Symposium on Quality Electronic Design (ISQED), pp. 496-501, San Jose, CA, March 18-21, 2002
  2. Simultaneous Optimization of Supply and Threshold Voltages for Low-Power and High-Performance Circuits in the Leakage Dominant Era
    A. Basu, S-C. Lin, V. Wason, A. Mehrotra and K. Banerjee
    ACM Design Automation Conference (DAC), pp. 884-887, San Diego, CA, June 7-10, 2004
  3. Supply and Power Optimization in Leakage Dominant Technologies
    Man Lung Mui, Kaustav Banerjee and Amit Mehrotra
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 24, No. 9, pp. 1362-1371, 2005
  4. Design and Analysis of Hybrid NEMS-CMOS Circuits for Ultra Low-Power Applications
    H. F. Dadgour and K. Banerjee
    IEEE/ACM Design Automation Conference (DAC), pp. 306-311, San Diego, CA, June 4-8, 2007
  5. Hybrid NEMS-CMOS Circuits
    K. Banerjee
    IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH’08), June 12-13, 2008, Anaheim, CA Panel: Non-CMOS NanoElectronics – Will it ever be real?
    INVITED PANEL
  6. Scaling and Variability Analysis of CNT-Based NEMS Devices and Circuits with Implications for Process Design
    H. Dadgour, A. M. Cassell and K. Banerjee
    IEEE International Electron Devices Meeting (IEDM), pp. 529-532, San Francisco, Dec. 15-17, 2008
  7. Scaling Analysis of Graphene Nanoribbon Tunnel-FETs
    Y. Khatami and K. Banerjee
    Device Research Conference (DRC), pp. 217-218, Penn State University, University Park, PA, June 22-24, pp. 217-218, 2009
  8. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status and Prospects
    Hong Li, Chuan Xu, Navin Srivastava, and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Special Issue on Compact Interconnect Models for Gigascale Integration, Vol. 56, No. 9, pp. 1799-1821, Sep 2009.
    INVITED AND HIGHLIGHTED ON THE JOURNAL COVERPAGE
  9. Steep Subthreshold Slope n- and p-type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits
    Yasin Khatami and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol. 56, No. 11, pp. 2752-2761, Nov. 2009
  10. Hybrid NEMS-CMOS Integrated Circuits: A Novel Strategy for Energy-Efficient Designs
    Hamed Dadgour and Kaustav Banerjee
    IET Transactions on Computers and Digital Techniques—Special Issue on Advances in Nanoelectronics Circuits and Systems, Vol. 3, No. 6, pp. 593-608, Nov. 2009
  11. Green Electronics using Graphene based Nanomaterials
    K. Banerjee
    Emerging Technologies in Solid State Devices Workshop, Baltimore, MD, December 5 - 6, 2009
  12. Design and Analysis of Compact Ultra Energy-Efficient Logic Gates Using Laterally-Actuated Double-Electrode NEMS
    H. F. Dadgour, M. M. Hussain, C. Smith and K. Banerjee
    Design Automation Conference (DAC), Anaheim, CA, June 13-18, 2010, pp. 893-896.
  13. Prospects of Carbon Nanomaterials for Next-Generation Green Electronics
    K. Banerjee, H. Li, C. Xu, Y. Khatami, H.F. Dadgour, D. Sarkar and W. Liu
    IEEE NANO, Kintex, Seoul, August 17-20, pp. 1-6, 2010.
  14. A New Paradigm in the Design of Energy-Efficient Digital Circuits Using Laterally-Actuated Double-Gate NEMS
    H.F. Dadgour, M.M. Hussain and K. Banerjee
    IEEE International Symposium on Low Power Electronics and Design (ISLPED), Austin, TX, August 18-20, pp. 7-12, 2010.
  15. A Novel Enhanced Electric-Field Impact-Ionization MOS Transistor
    Deblina Sarkar, Navab Singh and Kaustav Banerjee
    IEEE Electron Device Letters, vol. 31, no. 11, pp. 1175-1177, Nov. 2010.
  16. Carbon-Based Green Electronics
    Kaustav Banerjee
    Materials Research Society (MRS) Fall Symposium, Boston, MA, Nov. 29-Dec. 3, 2010. (INVITED)
  17. Electron-hole Duality During Band-to-Band Tunneling Process in Graphene-Nanoribbon Tunnel-Field-Effect Transistors
    Deblina Sarkar, Michael Krall, and Kaustav Banerjee
    Applied Physics Letters, Vol. 97, No. 26, p. 263109, Dec 27, 2010.
  18. High-Frequency Behavior of Graphene-Based Interconnects—Part II: Impedance Analysis and Implications for Inductor Design
    Deblina Sarkar, Chuan Xu, Hong Li, and Kaustav Banerjee
    IEEE Transactions on Electron Devices, vol. 58, no. 3, pp. 853-859, March 2011.
  19. Carbon Based Green Electronics
    K. Banerjee
    ACM/IEEE International Workshop on Timing Issues in the Specification and Synthesis of Digital Systems (TAU 2011), Santa Barbara, CA, March 31-April 1, 2011.
    KEYNOTE
  20. Vertical Si-Nanowire n-Type Tunneling FETs With Low Subthreshold Swing (≤ 50 mV/decade) at Room Temperature
    Ramanathan Gandhi, Zhixian Chen, Navab Singh, Kaustav Banerjee, and Sungjoo Lee
    IEEE Electron Device Letters, vol. 32, no. 4, pp. 437-439, April 2011
  21. Impact of Scaling on the Performance and Reliability Degradation of Metal-Contacts in NEMS Devices
    H. F. Dadgour, M. M. Hussain, A. Cassell, N. Singh and K. Banerjee
    IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, April 10-14, pp. 280-289, 2011.
  22. Demonstration of Vertical Silicon Nanowire Tunnel Field Effect Transistor with Low Subthreshold Slope < 50mV/decade
    R. Gandhi, Z. X. Chen, N. Singh, K. Banerjee, and S. J. Lee
    International Conference on Materials for Advanced Technologies (ICMAT), Singapore, June 26-July 1, 2011.
  23. Metallic-Nanoparticle Assisted Enhanced Band-to-Band Tunneling Current
    Deblina Sarkar and Kaustav Banerjee
    Applied Physics Letters, Vol. 99, No. 13, p. 133116, Sept 26, 2011.
  24. Vertically Stacked and Independently Controlled Twin-Gate MOSFETs on a Single Si-Nanowire
    Xiang Li, Zhixian Chen, Nansheng Shen, Deblina Sarkar, Navab Singh, Kaustav Banerjee, Guo-Qiang Lo and Dim-Lee Kwong
    IEEE Electron Device Letters, Vol. 32, No. 11, pp. 1492-1494, Nov. 2011.
  25. CMOS Compatible Vertical Silicon Nanowire Gate-All-Around p-type Tunneling FETs with ≤50 mV/decade Subthreshold Swing
    Ramanathan Gandhi, Zhixian Chen, Navab Singh, Kaustav Banerjee and Sungjoo Lee
    IEEE Electron Device Letters, Vol. 32, No. 11, pp. 1504-1506, Nov. 2011.
  26. Graphene Based Green Electronics
    K. Banerjee
    IEEE Electrical Design of Advanced Packaging & Systems (EDAPS) Symposium, Hangzhou, China, Dec 12-14, 2011.
    KEYNOTE
  27. Graphene Based Green Electronics
    K. Banerjee
    International Workshop on Physics of Semiconductors (IWPSD), IIT-Kanpur, India, Dec 18-22, 2011.
    INVITED TALK
  28. Fundamental Limitations of Conventional-FET Biosensors: Quantum-Mechanical-Tunneling to the Rescue
    D. Sarkar and K. Banerjee
    Device Research Conference (DRC), pp. 83-84, Penn State University, University Park, PA, June 18-22, 2012.
  29. NEMS based Ultra Energy-Efficient Digital ICs: Materials, Device Architectures, Logic Implementation, and Manufacturability
    H. F. Dadgour and K. Banerjee
    Chapter 10 in Microelectronics to Nanoelectronics: Materials, Devices & Manufacturability. Ed: Anupama B. Kaul, CRC Press, ISBN 9781466509542, July 2012.
  30. Top Illuminated Inverted Organic UV Photosensors With Single Layer Graphene Electrodes
    Martin Burkhardt, Wei Liu, Christopher G. Shuttle, Kaustav Banerjee, and Michael L. Chabinyc
    Applied Physics Letters, Vol. 101, 033302, 2012.
  31. ESD Characterization of Atomically-Thin Graphene
    H. Li, C. Russ, W. Liu, D. Johnsson, H. Gossner and K. Banerjee
    34th Annual EOS/ESD Symposium, pp. 1-8, Tucson, AZ, September 9-14, 2012.
  32. A Computational Study of Metal-Contacts to Beyond-Graphene 2D Semiconductor Materials
    Jiahao Kang, Deblina Sarkar, Wei Liu, Debdeep Jena and Kaustav Banerjee
    IEEE International Electron Devices Meeting (IEDM), pp. 407-410, San Francisco, Dec. 10-12, 2012
  33. Graphene nanoribbon based negative resistance device for ultra-low voltage digital logic applications
    Yasin Khatami, Jiahao Kang, and Kaustav Banerjee
    Applied Physics Letters, Vol. 102, No.4 , 043114, 2013.
  34. Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field-Effect-Transistors
    Wei Liu, Jiahao Kang, Deblina Sarkar, Yasin Khatami, Debdeep Jena and Kaustav Banerjee
    Nano Letters, Vol. 13, no. 5, pp. 1983-1990, 2013.
  35. Graphene and Beyond-Graphene 2D-Crystals for Green Electronics
    (INVITED) K. Banerjee, W. Liu, J. Kang, Y. Khatami and D. Sarkar
    18th Silicon Nanoelectronics Workshop, Kyoto, Japan, June 9-10, 2013, pp. 1-2.
  36. Proposal for All-Graphene Monolithic Logic Circuits
    Jiahao Kang, Deblina Sarkar, Yasin Khatami and Kaustav Banerjee
    Applied Physics Letters, Vol. 103, No. 8, 083113, 2013.
  37. 2D Electronics: Graphene and Beyond
    (KEYNOTE) W. Cao, J. Kang, W. Liu, Y. Khatami, D. Sarkar and K. Banerjee
    43rd European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, Sept. 16-20, 2013, pp. 1-8. Slides: []
  38. Prospects of Graphene Electrodes in Photovoltaics
    (INVITED) Y. Khatami, W. Liu, J. Kang and K. Banerjee
    Proc. SPIE 8824, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV, 88240T, September 25, 2013, doi:10.1117/12.2026581.
  39. Prospects of nanoCarbons and Emerging 2D-Crystals for Next-Generation Green Electronics
    (INVITED) K. Banerjee
    Advanced Metallization Conference 2013: 23rd Asian Session, The University of Tokyo, Tokyo, Japan, Oct. 7-10, 2013, pp. 1-2.
  40. 2-Dimensional Tunnel Devices and Circuits on Graphene: Opportunities and Challenges
    Jiahao Kang, Wei Cao, Deblina Sarkar, Yasin Khatami, Wei Liu and Kaustav Banerjee
    3rd Berkeley Symposium on Energy Efficient Electronic Systems, Berkeley, CA, Oct 28-29, 2013, pp. 1-2.
  41. High-Performance Field-Effect-Transistors on Monolayer-WSe2
    (INVITED) W. Liu, W. Cao, J. Kang, and K. Banerjee
    ECS Transactions 58 (7), pp. 281-285, 2013.
  42. Novel Logic Devices based on 2D Crystal Semiconductors: Opportunities and Challenges
    (INVITED) P. Zhao, W-S. Hwang, E-S. Kim, R. Feenstra, G. Gu, J. Kang, K. Banerjee, A. Seabaugh, H. Xing and D. Jena
    IEEE International Electron Devices Meeting (IEDM), Washington DC, Dec. 9-11, 2013, pp. 487-490.
  43. High-Performance Few-Layer-MoS2 Field-Effect-Transistor with Record Low Contact-Resistance
    W. Liu, J. Kang, W. Cao, D. Sarkar, Y. Khatami, D. Jena and K. Banerjee
    IEEE International Electron Devices Meeting (IEDM), Washington DC, Dec. 9-11, 2013, pp. 499-502.
  44. On the Electrostatics of Bernal-Stacked Few-Layer Graphene on Surface Passivated Semiconductors
    Yasin Khatami, Hong Li, Wei Liu and Kaustav Banerjee
    IEEE Transactions on Nanotechnology, Vol. 13, No. 1, pp. 94-100, 2014.
  45. Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene using Chemical Vapor Deposition
    Wei Liu, Stephan Krämer, Deblina Sarkar, Hong Li, Pulickel M. Ajayan, and Kaustav Banerjee
    ACS Chemistry of Materials, Vol. 26, No. 2, pp 907-915, 2014.
  46. High-Performance MoS2 Transistors with Low-Resistance Molybdenum Contacts
    Jiahao Kang, Wei Liu and Kaustav Banerjee
    Applied Physics Letters, Vol. 104, No. 9, 093106, 2014.
  47. Carbon Integrated Electronics
    Hong Li, Yasin Khatami, Deblina Sarkar, Jiahao Kang, Chuan Xu, Wei Liu, and Kaustav Banerjee
    in Intelligent Integrated Systems: Technologies, Devices and Architectures. Ed: S. Deleonibus, Pan Stanford Series on Intelligent Nanosystems, pp. 217-274, April 9, 2014.
  48. MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors
    Deblina Sarkar, Wei Liu, Xuejun Xie, Aaron Anselmo, Samir Mitragotri and Kaustav Banerjee
    ACS Nano, Vol. 8, No. 4, pp. 3992-4003, 2014.
  49. Correction to MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors
    Deblina Sarkar, Wei Liu, Xuejun Xie, Aaron Anselmo, Samir Mitragotri and Kaustav Banerjee
    ACS Nano, 2014.
  50. On the Electrostatic-Discharge Robustness of Graphene
    Hong Li, Christian C. Russ, Wei Liu, David Johnsson, Harald Gossner and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol. 61, No. 6, pp. 1920-1928, 2014.
  51. Graphene and beyond-graphene 2D crystals for next-generation green electronics
    (INVITED) Jiahao Kang, Wei Cao, Xuejun Xie, Deblina Sarkar, Wei Liu and Kaustav Banerjee
    Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 908305, June 5, 2014.
  52. Subthreshold-Swing Physics of Tunnel Field-Effect Transistors
    Wei Cao, Deblina Sarkar, Yasin Khatami, Jiahao Kang, and Kaustav Banerjee
    AIP Advances, 4, 067141, June 2014.
  53. Low-Frequency Noise in Bilayer MoS2 Transistor
    Xuejun Xie, Deblina Sarkar, Wei Liu, Jiahao Kang, Ognian Marinov, M. Jamal Deen and Kaustav Banerjee
    ACS Nano, Vol. 8, No. 6, pp. 5633-5640, 2014.
  54. Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
    Jiahao Kang, Wei Liu, Deblina Sarkar, Debdeep Jena and Kaustav Banerjee
    Physical Review X, Vol. 4, No. 3, pp. 031005, 2014.
  55. Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?
    Wei Cao, Jiahao Kang, Simone Bertolazzi, Andras Kis and Kaustav Banerjee
    IEEE Transactions on Electron Devices, vol. 61, No. 10, pp.3456-3464, 2014.
  56. A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect
    Wei Cao, Jiahao Kang, Wei Liu and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Vol. 61, No. 12, pp. 4282-4290, 2014.
  57. Computational Study of Interfaces between 2D MoS2 and Surroundings
    Jiahao Kang, Wei Liu and Kaustav Banerjee
    45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, December 10-13, 2014.
  58. Graphene Inductors for High-Frequency Applications – Design, Fabrication, Characterization, and Study of Skin Effect
    Xiang Li*, Jiahao Kang*, Xuejun Xie, Wei Liu, Deblina Sarkar, Junfa Mao and Kaustav Banerjee (*equal contributors)
    IEEE International Electron Devices Meeting (IEDM), San Francisco, Dec. 15-17, 2014, pp. 5.4.1–5.4.4.
  59. Performance Evaluation and Design Considerations of 2D Semiconductor based FETs for Sub-10 nm VLSI
    Wei Cao, Jiahao Kang, Deblina Sarkar, Wei Liu, and Kaustav Banerjee
    IEEE International Electron Devices Meeting (IEDM), San Francisco, Dec. 15-17, 2014, pp. 30.5.1–30.5.4.
  60. Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors
    Wei Liu, Deblina Sarkar, Jiahao Kang, Wei Cao, and Kaustav Banerjee
    ACS Nano, Vol. 9, No. 8, pp. 7904–7912, 2015.
  61. 2D Crystals and their Heterostructures for Green Electronics
    (INVITED) Kaustav Banerjee
    Proceedings of the 11th Topical Workshop on Heterostructure Microelectronics, Takayama, Japan, Aug 24-26, p. 10-1, 2015.
  62. 2D Crystals for Smart Life
    (INVITED SHORT COURSE) K. Banerjee
    47th International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, Sept. 27-30, 2015.
  63. A Subthermionic Tunnel Field-Effect Transistor with an Atomically Thin Channel
    Deblina Sarkar, Xuejun Xie, Wei Liu, Wei Cao, Jiahao Kang, Yongji Gong, Stephan Kraemer, Pulickel M. Ajayan and Kaustav Banerjee
    Nature, Vol. 526, pp. 91-95, 2015.
  64. 2D Semiconductor FETs- Projections and Design for Sub-10 nm VLSI
    Wei Cao, Jiahao Kang, Deblina Sarkar, Wei Liu and Kaustav Banerjee
    IEEE Transactions on Electron Devices, Special Issue to commemorate the 60th anniversary of the IEDM, Vol. 62, No. 11, pp. 3459-3469, 2015.
  65. ATLAS-TFET: Toward Green Transistors and Sensors
    (INVITED) K. Banerjee
    International Workshop on Dielectric Thin Films For Future Electron Devices (IWDTF), Miraikan, Tokyo, Japan, November 2-4, p. 1-4, 2015.
  66. Electrical Contacts to Two-dimensional Semiconductors
    Adrien Allain, Jiahao Kang, Kaustav Banerjee and Andras Kis
    Nature Materials, Vol. 14, pp. 1195–1205, 2015.
  67. Designing Band-to-Band Tunneling Field-Effect Transistors with 2D Semiconductors for Next-Generation Low-Power VLSI
    Wei Cao, Junkai Jiang, Jiahao Kang, Deblina Sarkar, Wei Liu, and Kaustav Banerjee
    IEEE International Electron Devices Meeting (IEDM), Washington DC, December 7-9, 2015, pp. 12.3.1-12.3.4.
  68. Surface Functionalization of Two-dimensional Metal Chalcogenides by Lewis Acid-Base Chemistry
    S. Lei, X. Wang, B. Li, J. Kang, Y. He, A. George, L. Ge, Y. Gong, P. Dong, Z. Jin, G. Brunetto, W. Chen, Z. Lin, R. Baines, D. S. Galvão, J. Lou, E. Barrera, K. Banerjee, R. Vajtai and P. Ajayan
    Nature Nanotechnology, Vol. 11, No. 5, pp. 465–471, 2016.
  69. Undoped and Catalyst-Free Germanium Nanowires for High-Performance p-type Enhancement-Mode Field-Effect Transistors
    M. Simanullang, G. B. M. Wisna, K. Usami, W. Cao, Y. Kawano, K. Banerjee, S. Oda
    Journal of Materials Chemistry C, Vol. 4, No. 22, pp. 5102-5108, 2016.
  70. Characterization of FeCl3 Intercalation Doped CVD Few-Layer Graphene
    Wei Liu, Jiahao Kang and Kaustav Banerjee
    IEEE Electron Device Letters, Vol. 37, No. 9, pp. 1246 - 1249, Sept. 2016.
  71. Two-Dimensional Van der Waals Materials
    Pulickel Ajayan, Philip Kim, and Kaustav Banerjee
    Physics Today, Vol. 69, No. 9, pp. 38-44, 2016.
  72. An Ultra-Short Channel Monolayer MoS2 FET Defined By the Curvature of a Thin Nanowire
    Wei Cao, Wei Liu, Jiahao Kang, and Kaustav Banerjee
    IEEE Electron Device Letters, Vol. 37, No. 11, pp. 1497-1500, Nov. 2016.
  73. Prospects of Ultra-thin Nanowire Gated 2D-FETs for Next-Generation CMOS Technology
    Wei Cao, Wei Liu, and Kaustav Banerjee
    IEEE International Electron Devices Meeting (IEDM), San Francisco, December 3-7, 2016, pp. 14.7.1-14.7.4.
  74. Effect of Band-Tails on the Subthreshold Performance of 2D Tunnel-FETs
    Haojun Zhang, Wei Cao, Jiahao Kang, and Kaustav Banerjee
    IEEE International Electron Devices Meeting (IEDM), San Francisco, December 3-7, 2016, pp. 30.3.1-30.3.4.
  75. Intercalation Doped Multilayer-Graphene-Nanoribbons for Next-Generation Interconnects
    Junkai Jiang, Jiahao Kang, Wei Cao, Xuejun Xie, Haojun Zhang, Jae Hwan Chu, Wei Liu, and Kaustav Banerjee
    Nano Letters, Vol. 17, No. 3, pp. 1482-1488, 2017.
  76. Characterization of Self-Heating and Current-Carrying Capacity of Intercalation Doped Graphene-Nanoribbon Interconnects
    Junkai Jiang, Jiahao Kang and Kaustav Banerjee
    IEEE International Reliability Physics Symposium (IRPS), Monterey, April 4-6, 2017, pp. 6B.1.1-6B.1.6.