Lithography

E-beam Lithography

• Brand New JEOL 6300FS
• Resolution to 8nm
• 20 mn resolution in 500 um x 500 um field

Optical Lithography

• Holography ≈ 200 nm
• Projection Stepper ≈ 400 nm resolution; 150 nm registration
• Contact Lithography (backside capability)

Nanoimprint Lithography

• Thermal process to 200°C; 600 psi
• UV curing

Thin Film Deposition

E-beam and Thermal Evaporation

• Ai, Ti, Al, Au, Ni, Pd, Pt, Ag, Ge, Zn, W, Ta
• Dielectric: SiO2, SrF, MgO, Ti O2, Ta2O5, SiO
• Other materials are possible

PECVD

• SiO2, SiON, Si3N4

Sputtering

• Si, Co, Ni, Ti, W, Au, Al, ITO, SiO2, SiN, TiO2, AlN, Al2O3
• Other materials are possible

Dry Etching

CH4, H2, Ar RIE

• II-VI etching
• III-V electronic/optoelectronic devices

SF6, CHF3, CF4, O2, Ar RIE/ICP

• General silicon, oxide, and nitride etch
• Separate Bosch Si etch Silicon Carbides for MEMS
• Call about special materials.

BCl3, Cl2, SiCI4, O2 Ar RIE/ICP

• General semiconductor and metal
• III-V etching with heated chuck for InP
• Call about special materials.

Thin Film Characterization

• SEM
• FESEM
• Profilometer
• Ellipsometer
• Reflectometer
• Probe Station with Curve Tracer
• AFM

Other Processes

• Contact Annealing
• Wet Chemical Etching
• Critical Point Drying
• Rapid Thermal Annealing
  • 1200°C in N2, H2N2, dry air
  • III-V, Si, other materials
• Flip-chip Bonding
• Wafer Bonding to 600°C