Guenhyung Oh

Guenhyung Oh was born in Gangneung, Gangwon State, Korea. He received his B.S. and M.S. degrees in Electrical Engineering from Jeonbuk National University (JBNU), Jeonju, Korea, in 2021 and 2023, respectively. His undergraduate research was focused on a high-performance field-effect transistor based on transition-metal dichalcogenides (TMDs) using high-k dielectric. For his M.S. thesis, he conducted research on TMD-based Tunneling FET grown by metal-organic chemical vapor deposition (MOCVD). During his M.S. degree, he also worked at 2D Epi Inc., a laboratory-based startup focused on wafer-scale TMD growth via MOCVD. He was the recipient of the Chancellor’s Research Excellence Award from JBNU in 2023. In Spring 2024, he joined Prof. Banerjee's Nanoelectronics Research Lab in the Electrical and Computer Engineering Department at the University of California, Santa Barbara, to pursue his PhD degree. His current research focuses on the design and exploration of novel heterostructure devices based on two-dimensional TMDs grown by (MO)CVD for next-generation high-performance and low-power consumption electronics.