Hamed Farshbaf Dadgour was born in Tabriz, Iran. He received his B.S. and M.S. degrees in Electrical Engineering from Sharif University of Technology in 1999 and from University of Tehran in 2001, respectively. Subsequently, he was instructor of VLSI course at the University of Tehran in 2002 and then he worked at Sharif University of Technology as a research assistant until 2004. In Fall 2005, he joined the NRL as a PhD student in the Electrical and Computer Engineering (ECE) department at the University of California, Santa Barbara. His research was primarily focused on the accurate estimation and improvement of energy efficiency in nanoscale CMOS technologies as well as on novel energy-efficient NEMS devices. He received his Ph.D. degree in ECE in Summer 2010.
His research helped identify a new source of random variability (Work Function Variation) in nanoscale high-k/metal gate transistors and was a finalist for the IEEE/ACM William J. McCalla ICCAD Best Paper Award in 2008. He also received an Award of Distinction from UCSB in 2009 and a Peter J. Frenkel Foundation Fellowship from the Institute for Energy Efficiency at UCSB in 2010.