Four NRL Inventions Showcased at IEEE IEDM 2017

The selection of four IEDM papers on two-dimensional (2D) materials and devices from the Nanoelectronics Research Lab highlights its role in research on 2D electronics, as well as the interest in these materials in the semiconductor industry

At the upcoming IEEE International Electron Devices Meeting (IEDM), the technical program committee of the conference has selected Professor Banerjee’s work on a novel quantum-transport simulator as one of the sixteen most significant contributions from around 225 papers, which will be presented at the meeting during December 3-6 in San Francisco, CA, for pre-conference publicity. The work reports the first study of a critical leakage mechanism in 2D memory transistors, and establishes their superiority over silicon.

Prof. Banerjee’s selected paper titled “Computational Study of Gate-Induced Drain Leakage in 2D-Semiconductor Field-Effect Transistors” will be presented on Wed, December 6, 2017, in Session 31 by recent ECE alum Dr. Jiahao Kang. The paper is co-authored by several other members in his Nanoelectronics Research Lab (NRL) and researchers from Micron Technology.

In addition, three of Professor Banerjee’s current graduate students – Junkai Jiang, Arnab Pal, and Xuejun Xie – will each present a paper on new innovations on 2D Electronics at this meeting. The selection of four papers from a single research group is a significant achievement in IEDM, which has been the world’s leading forum for reporting innovation, discovery, and breakthroughs in electron device technology for over 60 years.