Hsun-Ming Chang


Hsun-Ming Chang was born in Kaohsiung city, Taiwan. He received his Masters degree from the Graduate Institute of Photonics and Optoelectronics in 2017, and his Bachelors degree in Materials Science and Engineering in 2015, both from National Taiwan University, Taipei, Taiwan. In his graduate study, he focused on the research of 2D FETs, including black phosphorus FETs, 2D heterostructure devices and study on metal-2D semiconductors contacts, in collaboration with TSMC. In 2017, his research on the formation of metallic black phosphorus alloy at contact region was published in Scientific Reports, achieving an ultra-low contact resistance in black phosphorus devices. In Fall 2018, he joined Prof. Banerjee’s research group at the University of California, Santa Barbara, to pursue his PhD degree focused in the area of van der Waals heterostructures enabled novel electronic devices.