Beyond Moore Devices

Beyond-CMOS nanotransistors and their derivatives including logic and memory devices; 3D integration; Emerging ultra-low power quantum devices including sub kT/q transistors, and spintronics, valleytronics, mottronics devices, for applications in energy-efficient ICs and non-Von Neumann electronics including brain-inspired devices and circuits.

Selected Publications

• Computational Study of Gate-Induced Drain Leakage in 2D-Semiconductor Field-Effect Transistors

Jiahao Kang, Wei Cao, Arnab Pal, Sumeet Pandey, Steve Kramer, Richard Hill, Gurtej Sandhu and Kaustav Banerjee
IEEE International Electron Devices Meeting (IEDM), San Francisco, December 2-6, 2017, pp. 31.2.1-31.2.4.

• An Ultra-Short Channel Monolayer MoS₂ FET Defined By the Curvature of a Thin Nanowire

Wei Cao, Wei Liu, Jiahao Kang and Kaustav Banerjee
IEEE Electron Device Letters, Vol. 37, No. 11, pp. 1497-1500, Nov. 2016.

• A Subthermionic Tunnel Field-Effect Transistor with an Atomically Thin Channel

Deblina Sarkar, Xuejun Xie, Wei Liu, Wei Cao, Jiahao Kang, Yongji Gong, Stephan Kraemer, Pulickel M. Ajayan and Kaustav Banerjee
Nature, Vol. 526, pp. 91-95, 2015.
Read Media Coverage by Science Daily, IEEE Spectrum and EE Times

• 2D Semiconductor FETs- Projections and Design for Sub-10 nm VLSI

Wei Cao, Jiahao Kang, Deblina Sarkar, Wei Liu and Kaustav Banerjee
IEEE Transactions on Electron Devices, Special Issue to commemorate the 60th anniversary of the IEDM, Vol. 62, No. 11, pp. 3459-3469, 2015.

• Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe₂ Field-Effect-Transistors

Wei Liu, Jiahao Kang, Deblina Sarkar, Yasin Khatami, Debdeep Jena and Kaustav Banerjee
Nano Letters, Vol. 13, no. 5, pp. 1983-1990, 2013.
Read Media Coverage by Science Daily