The fundamentally new transistor employs atomically-thin semiconducting channel material and quantum mechanical tunneling, operates at a supply voltage of only 0.1 V with high ON/OFF current ratio, and lowers power dissipation by over 90% compared to the state-of-the-art silicon transistors.
The award selection committee credited the paper for being judged the most influential on research and industrial practice in computer-aided design of integrated circuits over the ten years since its original appearance at ICCAD.
Selection to this kind of “IEDM Hall of Fame” is significant because for over 60 years, IEDM has been the world’s leading forum for reporting innovation, discovery, and breakthroughs in electron device technology.
Banerjee one of only 60 engineers selected by the National Academy of Engineering to attend its prestigious German-American Frontiers of Engineering (GAFOE) Symposium in Potsdam, Germany, from April 16-18.
Researchers from ECE’s Nanoelectronics Research Lab (NRL) have recently released the first physics-based SPICE compatible compact model for 2D material based transistors in collaboration with NEEDS deployed on nanoHUB.org.
