NRL's 2D-FET Scaling Work among 11 Most Significant Papers in IEDM 2014
Selection to this kind of “IEDM Hall of Fame” is significant because for over 60 years, IEDM has been the world’s leading forum for reporting innovation, discovery, and breakthroughs in electron device technology.
From ECE Department news coverage:
On the occasion of the 60th anniversary of the IEEE International Electron Devices Meeting (IEDM), the technical program committee of the conference last December selected the eleven most significant contributions from over 220 papers presented in IEDM 2014 in San Francisco, CA, for a special section in the IEEE Transactions on Electron Devices (T-ED). The special section appears in the November 2015 issue of the journal and is aimed at commemorating 60 years of IEDM.
Prof. Banerjee’s selected paper in T-ED that was presented at the 2014 IEDM by ECE PhD candidate Wei Cao is titled “2D Semiconductor FETs–Projections and Design for Sub-10 nm VLSI”. The paper is co-authored by several other members in his Nanoelectronics Research Lab.
