Publications

  1. Designing Artificial 2D Crystals with Site and Size Controlled Quantum Dots
    Xuejun Xie, Jiahao Kang, Wei Cao, Jae Hwan Chu, Yongji Gong, Pulickel M. Ajayan, and Kaustav Banerjee
  2. Boosting Hydrogen Evolution Performance of MoS2 by Band Structure Engineering
    Jing Li*, Jiahao Kang*, Qian Cai, Wentin Hong, Chuanyong Jian, Wei Liu, and Kaustav Banerjee (* Equal contributors)
  3. 2D/3D Tunnel-FET: Toward Green Transistors and Sensors
    (INVITED) Wei Cao, Jiahao Kang, and Kaustav Banerjee
  4. Characterization of Self-Heating and Current-Carrying Capacity of Intercalation Doped Graphene-Nanoribbon Interconnects
    Junkai Jiang, Jiahao Kang and Kaustav Banerjee
  5. Intercalation Doped Multilayer-Graphene-Nanoribbons for Next-Generation Interconnects
    Junkai Jiang, Jiahao Kang, Wei Cao, Xuejun Xie, Haojun Zhang, Jae Hwan Chu, Wei Liu, and Kaustav Banerjee
  6. Understanding the Device Physics in Polymer-Based Ionic-Organic Ratchets
    Y. Hu, V. Brus, W. Cao, K. Liao, H. Phan, M. Wang, K. Banerjee, G. C. Bazan, and T-Q. Nguyen
  7. Effect of Band-Tails on the Subthreshold Performance of 2D Tunnel-FETs
    Haojun Zhang, Wei Cao, Jiahao Kang, and Kaustav Banerjee
  8. Prospects of Ultra-thin Nanowire Gated 2D-FETs for Next-Generation CMOS Technology
    Wei Cao, Wei Liu, and Kaustav Banerjee
  9. An Ultra-Short Channel Monolayer MoS2 FET Defined By the Curvature of a Thin Nanowire
    Wei Cao, Wei Liu, Jiahao Kang, and Kaustav Banerjee
  10. Two-Dimensional Van der Waals Materials
    Pulickel Ajayan, Philip Kim, and Kaustav Banerjee
  11. Characterization of FeCl3 Intercalation Doped CVD Few-Layer Graphene
    Wei Liu, Jiahao Kang and Kaustav Banerjee
  12. Undoped and Catalyst-Free Germanium Nanowires for High-Performance p-type Enhancement-Mode Field-Effect Transistors
    M. Simanullang, G. B. M. Wisna, K. Usami, W. Cao, Y. Kawano, K. Banerjee, S. Oda
  13. Surface Functionalization of Two-dimensional Metal Chalcogenides by Lewis Acid-Base Chemistry
    S. Lei, X. Wang, B. Li, J. Kang, Y. He, A. George, L. Ge, Y. Gong, P. Dong, Z. Jin, G. Brunetto, W. Chen, Z. Lin, R. Baines, D. S. Galvão, J. Lou, E. Barrera, K. Banerjee, R. Vajtai and P. Ajayan
  14. Designing Band-to-Band Tunneling Field-Effect Transistors with 2D Semiconductors for Next-Generation Low-Power VLSI
    Wei Cao, Junkai Jiang, Jiahao Kang, Deblina Sarkar, Wei Liu, and Kaustav Banerjee
  15. Electrical Contacts to Two-dimensional Semiconductors
    Adrien Allain, Jiahao Kang, Kaustav Banerjee and Andras Kis
  16. Engineered 2D Nanomaterials–Protein Interfaces for Efficient Sensors
    K. K. Tadi, T. N Narayanan, S. Arepalli, K. Banerjee, S. Viswanathan, D. Liepmann, P. M Ajayan, V. Renugopalakrishnan
  17. ATLAS-TFET: Toward Green Transistors and Sensors
    (INVITED) K. Banerjee
    International Workshop on Dielectric Thin Films For Future Electron Devices (IWDTF), Miraikan, Tokyo, Japan, November 2-4, p. 1-4, 2015.
  18. 2D Semiconductor FETs- Projections and Design for Sub-10 nm VLSI
    Wei Cao, Jiahao Kang, Deblina Sarkar, Wei Liu and Kaustav Banerjee
  19. A Subthermionic Tunnel Field-Effect Transistor with an Atomically Thin Channel
    Deblina Sarkar, Xuejun Xie, Wei Liu, Wei Cao, Jiahao Kang, Yongji Gong, Stephan Kraemer, Pulickel M. Ajayan and Kaustav Banerjee
  20. 2D Crystals for Smart Life
    (INVITED SHORT COURSE) K. Banerjee
    47th International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, Sept. 27-30, 2015.
  21. 2D Crystals and their Heterostructures for Green Electronics
    (INVITED) Kaustav Banerjee
    Proceedings of the 11th Topical Workshop on Heterostructure Microelectronics, Takayama, Japan, Aug 24-26, p. 10-1, 2015.
  22. Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors
    Wei Liu, Deblina Sarkar, Jiahao Kang, Wei Cao, and Kaustav Banerjee
  23. Functionalization of Transition Metal Dichalcogenides with Metallic Nanoparticles: Implications for Doping and Gas-Sensing
    Deblina Sarkar, Xuejun Xie, Jiahao Kang, Haojun Zhang, Wei Liu, Jose Navarrete, Martin Moskovits, and Kaustav Banerjee
  24. Performance Evaluation and Design Considerations of 2D Semiconductor based FETs for Sub-10 nm VLSI
    Wei Cao, Jiahao Kang, Deblina Sarkar, Wei Liu, and Kaustav Banerjee
  25. Graphene Inductors for High-Frequency Applications – Design, Fabrication, Characterization, and Study of Skin Effect
    Xiang Li*, Jiahao Kang*, Xuejun Xie, Wei Liu, Deblina Sarkar, Junfa Mao and Kaustav Banerjee (*equal contributors)
  26. Computational Study of Interfaces between 2D MoS2 and Surroundings
    Jiahao Kang, Wei Liu and Kaustav Banerjee
    45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, December 10-13, 2014.
  27. A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect
    Wei Cao, Jiahao Kang, Wei Liu and Kaustav Banerjee
  28. 2D Crystal Semiconductors: Intimate Contacts
    Debdeep Jena, Kaustav Banerjee and Grace Huili Xing
    Nature Materials (News & Views), Vol. 13, pp. 1076-1078, Dec. 2014.
  29. Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?
    Wei Cao, Jiahao Kang, Simone Bertolazzi, Andras Kis and Kaustav Banerjee
  30. Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
    Jiahao Kang, Wei Liu, Deblina Sarkar, Debdeep Jena and Kaustav Banerjee
  31. Low-Frequency Noise in Bilayer MoS2 Transistor
    Xuejun Xie, Deblina Sarkar, Wei Liu, Jiahao Kang, Ognian Marinov, M. Jamal Deen and Kaustav Banerjee
  32. Subthreshold-Swing Physics of Tunnel Field-Effect Transistors
    Wei Cao, Deblina Sarkar, Yasin Khatami, Jiahao Kang, and Kaustav Banerjee
  33. Graphene and beyond-graphene 2D crystals for next-generation green electronics
    (INVITED) Jiahao Kang, Wei Cao, Xuejun Xie, Deblina Sarkar, Wei Liu and Kaustav Banerjee
  34. On the Electrostatic-Discharge Robustness of Graphene
    Hong Li, Christian C. Russ, Wei Liu, David Johnsson, Harald Gossner and Kaustav Banerjee
  35. Correction to MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors
    Deblina Sarkar, Wei Liu, Xuejun Xie, Aaron Anselmo, Samir Mitragotri and Kaustav Banerjee
  36. MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors
    Deblina Sarkar, Wei Liu, Xuejun Xie, Aaron Anselmo, Samir Mitragotri and Kaustav Banerjee
  37. Carbon Integrated Electronics
    Hong Li, Yasin Khatami, Deblina Sarkar, Jiahao Kang, Chuan Xu, Wei Liu, and Kaustav Banerjee
    in Intelligent Integrated Systems: Technologies, Devices and Architectures. Ed: S. Deleonibus, Pan Stanford Series on Intelligent Nanosystems, pp. 217-274, April 9, 2014.
  38. High-Performance MoS2 Transistors with Low-Resistance Molybdenum Contacts
    Jiahao Kang, Wei Liu and Kaustav Banerjee
  39. Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene using Chemical Vapor Deposition
    Wei Liu, Stephan Krämer, Deblina Sarkar, Hong Li, Pulickel M. Ajayan, and Kaustav Banerjee
  40. On the Electrostatics of Bernal-Stacked Few-Layer Graphene on Surface Passivated Semiconductors
    Yasin Khatami, Hong Li, Wei Liu and Kaustav Banerjee
  41. High-Performance Few-Layer-MoS2 Field-Effect-Transistor with Record Low Contact-Resistance
    W. Liu, J. Kang, W. Cao, D. Sarkar, Y. Khatami, D. Jena and K. Banerjee
  42. Novel Logic Devices based on 2D Crystal Semiconductors: Opportunities and Challenges
    (INVITED) P. Zhao, W-S. Hwang, E-S. Kim, R. Feenstra, G. Gu, J. Kang, K. Banerjee, A. Seabaugh, H. Xing and D. Jena
  43. High-Performance Field-Effect-Transistors on Monolayer-WSe2
    (INVITED) W. Liu, W. Cao, J. Kang, and K. Banerjee
  44. 2-Dimensional Tunnel Devices and Circuits on Graphene: Opportunities and Challenges
    Jiahao Kang, Wei Cao, Deblina Sarkar, Yasin Khatami, Wei Liu and Kaustav Banerjee
  45. Prospects of nanoCarbons and Emerging 2D-Crystals for Next-Generation Green Electronics
    (INVITED) K. Banerjee
    Advanced Metallization Conference 2013: 23rd Asian Session, The University of Tokyo, Tokyo, Japan, Oct. 7-10, 2013, pp. 1-2.
  46. Prospects of Graphene Electrodes in Photovoltaics
    (INVITED) Y. Khatami, W. Liu, J. Kang and K. Banerjee
  47. 2D Electronics: Graphene and Beyond
    (KEYNOTE) W. Cao, J. Kang, W. Liu, Y. Khatami, D. Sarkar and K. Banerjee
    43rd European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, Sept. 16-20, 2013, pp. 1-8. Slides: []
  48. Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications – Part II: Characterization
    Hong Li, Wei Liu, Alan M. Cassell, Franz Kreupl and Kaustav Banerjee
  49. Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications – Part I: Process Development
    Hong Li, Wei Liu, Alan M. Cassell, Franz Kreupl and Kaustav Banerjee
  50. Proposal for All-Graphene Monolithic Logic Circuits
    Jiahao Kang, Deblina Sarkar, Yasin Khatami and Kaustav Banerjee
  51. Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability
    Chuan Xu, Seshadri K. Kolluri, Kazuhiko Endo and Kaustav Banerjee
  52. Graphene and Beyond-Graphene 2D-Crystals for Green Electronics
    (INVITED) K. Banerjee, W. Liu, J. Kang, Y. Khatami and D. Sarkar
    18th Silicon Nanoelectronics Workshop, Kyoto, Japan, June 9-10, 2013, pp. 1-2.
  53. Impact-Ionization Field-Effect-Transistor Based Biosensors for Ultra-Sensitive Detection of Biomolecules
    Deblina Sarkar, Harald Gossner, Walter Hansch and Kaustav Banerjee
  54. VLSI Technology and Circuits
    K. Banerjee and S. Ikeda
  55. Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field-Effect-Transistors
    Wei Liu, Jiahao Kang, Deblina Sarkar, Yasin Khatami, Debdeep Jena and Kaustav Banerjee
  56. Graphene nanoribbon based negative resistance device for ultra-low voltage digital logic applications
    Yasin Khatami, Jiahao Kang, and Kaustav Banerjee
  57. Tunnel-Field-Effect-Transistor Based Gas-Sensor: Introducing Gas Detection with a Quantum-Mechanical Transducer
    Deblina Sarkar, Harald Gossner, Walter Hansch and Kaustav Banerjee
  58. Physical Modeling of the Capacitance and Capacitive Coupling-Noise of Through-Oxide Vias in FDSOI Based Ultra-High Density 3-D ICs
    Chuan Xu and Kaustav Banerjee
  59. A Computational Study of Metal-Contacts to Beyond-Graphene 2D Semiconductor Materials
    Jiahao Kang, Deblina Sarkar, Wei Liu, Debdeep Jena and Kaustav Banerjee
  60. Fast High-Frequency Impedance Extraction of Horizontal Interconnects and Inductors in 3-D ICs with Multiple Substrates
    Chuan Xu, Navin Srivastava, Roberto Suaya and Kaustav Banerjee
  61. Some Clarifications on “Compact Modeling and Analysis of Through-Si-Via Induced Electrical Noise Coupling in Three-Dimensional ICs
    Chuan Xu, Roberto Suaya and Kaustav Banerjee
  62. ESD Characterization of Atomically-Thin Graphene
    H. Li, C. Russ, W. Liu, D. Johnsson, H. Gossner and K. Banerjee
  63. Metal to Multi-Layer Graphene Contact--Part II: Analysis of Contact Resistance
    Yasin Khatami, Hong Li, Chuan Xu, and Kaustav Banerjee
  64. Metal to Multi-Layer Graphene Contact--Part I: Contact Resistance Modeling
    Yasin Khatami, Hong Li, Chuan Xu, and Kaustav Banerjee
  65. Top Illuminated Inverted Organic UV Photosensors With Single Layer Graphene Electrodes
    Martin Burkhardt, Wei Liu, Christopher G. Shuttle, Kaustav Banerjee, and Michael L. Chabinyc
  66. NEMS based Ultra Energy-Efficient Digital ICs: Materials, Device Architectures, Logic Implementation, and Manufacturability
    H. F. Dadgour and K. Banerjee
    Chapter 10 in Microelectronics to Nanoelectronics: Materials, Devices & Manufacturability. Ed: Anupama B. Kaul, CRC Press, ISBN 9781466509542, July 2012.
  67. Fundamental Limitations of Conventional-FET Biosensors: Quantum-Mechanical-Tunneling to the Rescue
    D. Sarkar and K. Banerjee
  68. Fast Extraction of High-Frequency Parallel Admittance of Through-Silicon-Vias and their Capacitive Coupling-Noise to Active Regions
    C. Xu, R. Suaya and K. Banerjee
  69. Proposal for Tunnel-Field-Effect-Transistor as Ultra-Sensitive and Label-Free Biosensors
    Deblina Sarkar and Kaustav Banerjee
  70. Graphene Based Green Electronics
    K. Banerjee
    International Workshop on Physics of Semiconductors (IWPSD), IIT-Kanpur, India, Dec 18-22, 2011.
    INVITED TALK
  71. Future of Carbon Nanomaterials as Next-Generation Interconnects and Passives Devices
    Hong Li, Chuan Xu, Deblina Sarkar, Yasin Khatami, Wei Liu and Kaustav Banerjee
    IEEE Electrical Design of Advanced Packaging & Systems (EDAPS) Symposium, Hangzhou, China, Dec 12-14, 2011
  72. Some Results Pertaining Electromagnetic Characterization and Model Building for Passive Systems Including TSVs, for 3-D IC’s Applications
    R. Suaya , C. Xu , V Kourkoulos , K Banerjee, Z. Mahmood and L. Daniel
  73. Graphene Based Green Electronics
    K. Banerjee
    IEEE Electrical Design of Advanced Packaging & Systems (EDAPS) Symposium, Hangzhou, China, Dec 12-14, 2011.
    KEYNOTE
  74. Compact Capacitance and Capacitive Coupling-Noise Modeling of Through-Oxide Vias in FDSOI Based Ultra-High Density 3-D ICs
    C. Xu and K. Banerjee
  75. Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper using Chemical Vapor Deposition
    Wei Liu, Hong Li, Chuan Xu, Yasin Khatami and Kaustav Banerjee
  76. Vertically Stacked and Independently Controlled Twin-Gate MOSFETs on a Single Si-Nanowire
    Xiang Li, Zhixian Chen, Nansheng Shen, Deblina Sarkar, Navab Singh, Kaustav Banerjee, Guo-Qiang Lo and Dim-Lee Kwong
  77. CMOS Compatible Vertical Silicon Nanowire Gate-All-Around p-type Tunneling FETs with ≤50 mV/decade Subthreshold Swing
    Ramanathan Gandhi, Zhixian Chen, Navab Singh, Kaustav Banerjee and Sungjoo Lee
  78. Compact Modeling and Analysis of Through-Si-Via Induced Electrical Noise Coupling in 3-D ICs
    Chuan Xu, Roberto Suaya and Kaustav Banerjee
  79. A Physical Model for Work-Function Variation in Ultra-Short Channel Metal-Gate MOSFETs
    Seid Hadi Rasouli, Chuan Xu, Navab Singh and Kaustav Banerjee
  80. A Fully Analytical Model for the Series Impedance of Through-Silicon Vias with Consideration of Substrate Effects and Coupling with Horizontal Interconnects
    Chuan Xu, Vassilis Kourkoulos, Roberto Suaya and Kaustav Banerjee
  81. Metallic-Nanoparticle Assisted Enhanced Band-to-Band Tunneling Current
    Deblina Sarkar and Kaustav Banerjee
  82. Carbon Nanotube Vias: Does Ballistic Electron-Phonon Transport Imply Improved Performance and Reliability?
    Hong Li, Navin Srivastava, Jun-Fa Mao, Wen-Yan Yin and Kaustav Banerjee
  83. Grain-Orientation Induced Quantum Confinement Variation in FinFETs and Multi-Gate Ultra-Thin Body CMOS Devices and Implications for Digital Design
    Seid Hadi Rasouli, Kazuhiko Endo, Jone F. Chen, Navab Singh and Kaustav Banerjee
  84. Demonstration of Vertical Silicon Nanowire Tunnel Field Effect Transistor with Low Subthreshold Slope < 50mV/decade
    R. Gandhi, Z. X. Chen, N. Singh, K. Banerjee, and S. J. Lee
    International Conference on Materials for Advanced Technologies (ICMAT), Singapore, June 26-July 1, 2011.
  85. Vertical Si-Nanowire n-Type Tunneling FETs With Low Subthreshold Swing (≤ 50 mV/decade) at Room Temperature
    Ramanathan Gandhi, Zhixian Chen, Navab Singh, Kaustav Banerjee, and Sungjoo Lee
  86. Impact of Scaling on the Performance and Reliability Degradation of Metal-Contacts in NEMS Devices
    H. F. Dadgour, M. M. Hussain, A. Cassell, N. Singh and K. Banerjee
  87. Carbon Based Green Electronics
    K. Banerjee
    ACM/IEEE International Workshop on Timing Issues in the Specification and Synthesis of Digital Systems (TAU 2011), Santa Barbara, CA, March 31-April 1, 2011.
    KEYNOTE
  88. High-Frequency Behavior of Graphene-Based Interconnects—Part I: Impedance Modeling
    Deblina Sarkar, Chuan Xu, Hong Li, and Kaustav Banerjee
  89. High-Frequency Behavior of Graphene-Based Interconnects—Part II: Impedance Analysis and Implications for Inductor Design
    Deblina Sarkar, Chuan Xu, Hong Li, and Kaustav Banerjee
  90. Factors Influencing the Synthesis of Monolayer and Bilayer Graphene on Copper using Chemical Vapor Deposition
    Wei Liu, Hong Li, Chuan Xu and Kaustav Banerjee
    38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38), San Diego, CA, January 16-20, 2011.
  91. Electron-hole Duality During Band-to-Band Tunneling Process in Graphene-Nanoribbon Tunnel-Field-Effect Transistors
    Deblina Sarkar, Michael Krall, and Kaustav Banerjee
  92. A Quantitative Inquisition into ESD Sensitivity to Strain in Nanoscale CMOS Protection Devices
    D. Sarkar, S. Thijs, D. Linten, C. Russ, H. Gossner and K. Banerjee
  93. Compact Modeling and Analysis of Coupling Noise Induced by Through-Si-Vias in 3-D ICs
    C. Xu, R. Suaya and K. Banerjee
  94. Compact AC Modeling and Performance Analysis of Through-Silicon Vias (TSVs) in 3-D ICs
    Chuan Xu, Hong Li, Roberto Suaya and Kaustav Banerjee
  95. Carbon-Based Green Electronics
    Kaustav Banerjee
    Materials Research Society (MRS) Fall Symposium, Boston, MA, Nov. 29-Dec. 3, 2010. (INVITED)
  96. Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design
    S. H. Rasouli, K. Endo, and K. Banerjee
  97. Design Optimization of FinFET Domino Logic Considering the Width Quantization Property
    Seid Hadi Rasouli, Hamed F. Dadgour, Kazuhiko Endo, Hanpei Koike, and Kaustav Banerjee
  98. A Novel Variation-Tolerant Keeper Architecture for High-Performance Low-Power Wide Fan-in Dynamic Gates
    Hamed Dadgour and Kaustav Banerjee
  99. A Novel Enhanced Electric-Field Impact-Ionization MOS Transistor
    Deblina Sarkar, Navab Singh and Kaustav Banerjee
  100. A Thermal Simulation Process Based on Electrical. Modeling for Complex Interconnect, Packaging and 3DI Structures
    Lijun Jiang, Chuan Xu, Barry J. Rubin, Alan J. Weger, Alina Deutsch, Howard Smith, Alain Caron, and Kaustav Banerjee
  101. Grain-Orientation Induced Work-Function Variation in Nanoscale Metal-Gate Transistors––Part I: Modeling, Analysis, and Experimental Validation
    Hamed F. Dadgour, Kazuhiko Endo, Vivek De, and Kaustav Banerjee
  102. Grain-Orientation Induced Work-Function Variation in Nanoscale Metal-Gate Transistors––Part II: Implications for Process, Device, and Circuit Design
    Hamed F. Dadgour, Kazuhiko Endo, Vivek De, and Kaustav Banerjee
  103. A New Paradigm in the Design of Energy-Efficient Digital Circuits Using Laterally-Actuated Double-Gate NEMS
    H.F. Dadgour, M.M. Hussain and K. Banerjee
  104. Prospects of Carbon Nanomaterials for Next-Generation Green Electronics
    K. Banerjee, H. Li, C. Xu, Y. Khatami, H.F. Dadgour, D. Sarkar and W. Liu
  105. Carbon Nanomaterials: The Ideal Interconnect Technology for Next-Generation ICs
    Hong Li, Chuan Xu, and Kaustav Banerjee
    INVITED
  106. Accurate Calculations of the High-frequency Impedance Matrix for VLSI Interconnects and Inductors above a Multi-layer Substrate: A VARPRO success story
    N. Srivastava, R. Suaya, V. Pereyra and K. Banerjee
    in Exponential Data Fitting and its Applications, Editors: V. Pereyra and G. Scherer. Bentham Science Publishers, ISBN: 978-1-60805-048-2, 2010.
  107. Effect of Grain Orientation on NBTI Variation and Recovery in Emerging Metal-Gate Devices
    Seid Hadi Rasouli and Kaustav Banerjee
  108. Compact AC Modeling and Performance Analysis of Through-Silicon Vias (TSVs) in 3-D ICs
    C. Xu, H. Li, R. Suaya and K. Banerjee
  109. Graphene Based Heterostructure Tunnel-FETs for Low-Voltage/High-Performance ICs
    Y. Khatami, M. Krall, H. Li., C. Xu., K. Banerjee
  110. CAD for Nanoelectronics: Earlier the Better
    K. Banerjee
    IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH’08), June 17-18, 2010, Anaheim, CA PANEL: CAD for Nanoelectronic Circuits and Architectures – Are we there yet?
  111. Design and Analysis of Compact Ultra Energy-Efficient Logic Gates Using Laterally-Actuated Double-Electrode NEMS
    H. F. Dadgour, M. M. Hussain, C. Smith and K. Banerjee
  112. AC Conductance Modeling and Analysis of Graphene Nanoribbon Interconnects
    D. Sarkar, C. Xu, H. Li, and K. Banerjee
  113. An Efficient 3D Green’s Function Approach for Fast Impedance Extraction of Interconnects and Spiral Inductors in CMOS RF/Millimeter-wavelength Circuits
    N. Srivastava, R. Suaya and K. Banerjee
  114. A Built-in Aging Detection and Compensation Technique for Improving Reliability of Nanoscale CMOS Designs
    H. Dadgour and K. Banerjee
  115. Corrections to “Analytical Expressions for High-Frequency VLSI Interconnect Impedance Extraction in the Presence of a Multilayer Conductive Substrate”
    Navin Srivastava, Chuan. Xu, Roberto Suaya, and Kaustav Banerjee
  116. Carbon based Nanomaterials as Interconnects and Passives for Next-Generation VLSI and 3-D ICs
    K. Banerjee
    IEEE WMED, Boise, Idaho, April 16, 2010
    INVITED TUTORIAL
  117. Carbon Based Active and Passive Devices for Next-Generation ICs
    K. Banerjee, W. Liu, H. Li, Y.Khatami, and C. Xu
    Ultimate Limit of Integration in Silicon (ULIS), Glasgow, Scotland, March 17-19, 2010.
    INVITED--PLENARY
  118. Aging-Resilient Design of Pipelined Architectures using Novel Detection and Correction Circuits
    H. Dadgour and K. Banerjee
  119. Efficient 3D High-frequency Impedance Extraction for General Interconnects and Inductors Above a Layered Substrate
    N. Srivastava, R. Suaya and K. Banerjee
  120. Single wall carbon nanotube-Aptamer Based Biosensors
    S. H. Varghese, Y. Nakajima, Y. Yoshida, T. Maekawa, T. Hanajiri, K. Banerjee, D. S. Kumar
    7 th International Symposium on Bioscience and Nanotechnology, Tokyo, Japan, December 20-21, 2009.
  121. Carbon Nanomaterial based Interconnects and Passives for Next-Generation ICs
    K. Banerjee, H. Li and C. Xu
    XVth International Workshop on Physics of Semiconductor Devices (IWPSD), New Delhi India, Dec. 15-19, 2009
  122. Impact of Strain Engineering and Channel Orientation on the ESD Performance of Nanometer Scale CMOS Devices
    J. Lu, C. Duvvury, H. Gossner and K. Banerjee
  123. Compact AC Modeling and Analysis of Cu, W, and CNT based Through-Silicon Vias (TSVs) in 3-D ICs
    C. Xu, H. Li, R. Suaya, K. Banerjee
  124. Green Electronics using Graphene based Nanomaterials
    K. Banerjee
    Emerging Technologies in Solid State Devices Workshop, Baltimore, MD, December 5 - 6, 2009
  125. Experimental Investigation of ESD Performance for Strained Silicon Nano-Devices
    D. Sarkar, H. Gossner and K. Banerjee
    ESD Forum, Berlin, Dec. 1-2, 2009
  126. Variability Analysis of FinFET-Based Devices and Circuits Considering Electrical Confinement and Width Quantization
    S.H. Rasouli, K. Endo, and K. Banerjee
  127. Fast 3-D Thermal Analysis of Complex Interconnect Structures Using Electrical Modeling and Simulation Methodologies
    C. Xu, L. Jiang, S. K. Kolluri, B. J. Rubin, A. Deutsch, H. Smith, K. Banerjee
  128. Steep Subthreshold Slope n- and p-type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits
    Yasin Khatami and Kaustav Banerjee
  129. Hybrid NEMS-CMOS Integrated Circuits: A Novel Strategy for Energy-Efficient Designs
    Hamed Dadgour and Kaustav Banerjee
  130. Carbon Based Active and Passive Devices for Next-Generation ICs
    K. Banerjee, H. Dadgour, Y. Khatami, H. Li, C. Xu
    Global COE International Symposium on Silicon Nano Devices in 2030: Prospects by World’s Leading Scientists, Oct. 13-14, Tokyo, 2009
  131. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status and Prospects
    K. Banerjee, H. Li and C. Xu
    International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Oct. 7-9, 2009
  132. High-Frequency Analysis of Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design
    Hong Li and Kaustav Banerjee
  133. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status and Prospects
    Hong Li, Chuan Xu, Navin Srivastava, and Kaustav Banerjee
    INVITED AND HIGHLIGHTED ON THE JOURNAL COVERPAGE
  134. Prospects of Carbon Nanomaterials in VLSI for Interconnections and Energy Storage
    K. Banerjee, H. Li and C. Xu
  135. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status and Prospects
    K. Banerjee, H. Li, N. Srivastava and C. Xu
    Progress in Electromagnetics Research Symposium (PIERS), Moscow, Russia, August 18-21, 2009
  136. An Analytical Treatment of High-frequency Impedance Extraction for Interconnects and Inductors in the Presence of a Multi-layer Substrate
    R. Suaya, N. Srivastava and K. Banerjee
    Progress in Electromagnetics Research Symposium (PIERS), Moscow, Russia, August 18-21, 2009
  137. Modeling, Analysis and Design of Graphene Nano-Ribbon Interconnects
    Chuan Xu, Hong Li, and Kaustav Banerjee
  138. Graphene Based Nanomaterials for VLSI Interconnect and Energy-Storage Applications
    K. Banerjee
    ACM/IEEE System Level Interconnect Prediction (SLIP), San Francisco, CA, July 26, 2009
    INVITED PANEL
  139. On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnections
    Navin Srivastava, Hong Li, Franz Kreupl, and Kaustav Banerjee
  140. Analytical Expressions for High-Frequency VLSI Interconnect Impedance Extraction in the Presence of a Multi-layer Conductive Substrate
    Navin Srivastava, Roberto Suaya and Kaustav Banerjee
  141. Scaling Analysis of Graphene Nanoribbon Tunnel-FETs
    Y. Khatami and K. Banerjee
  142. Carbon Nanomaterials for Next Generation Interconnects and Passives: Physics, Status and Prospects
    K. Banerjee
    International Electrostatic Discharge Workshop (IEW), Lake Tahoe, CA, May 18-21, 2009
    KEYNOTE
  143. Graphene Based Transistors: Physics, Status and Future Perspectives
    K. Banerjee, Y. Khatami, C. Kshirsagar, S. H. Rasouli
  144. Carbon Nanomaterials for Next Generation Interconnects and Passives: Physics, Status and Prospects
    K. Banerjee
    18th Materials for Advanced Metallization Conference (MAM), Grenoble, France, March 8-11
  145. CMOS vs. Nano: Comrades or Rivals?
    K. Banerjee
    INVITED PANEL
  146. High-Speed Low-Power FinFET Based Domino Logic
    S. H. Rasouli, H. Koike and K. Banerjee
  147. Graphene Nano-Ribbon (GNR) Interconnects: A Genuine Contender or a Delusive Dream?
    C. Xu, H. Li and K. Banerjee
  148. High-Frequency Effects in Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design
    H. Li and K. Banerjee
  149. Scaling and Variability Analysis of CNT-Based NEMS Devices and Circuits with Implications for Process Design
    H. Dadgour, A. M. Cassell and K. Banerjee
  150. Modeling and Analysis of Grain-Orientation Effects in Emerging Metal-Gate Devices and Implications for SRAM Reliability
    H. Dadgour, K. Endo, V. De and K. Banerjee
  151. Accurate Intrinsic Gate Capacitance Model for Carbon Nanotube-Array Based FETs Considering Screening Effect
    Chaitanya Kshirsagar, Hong Li, Tom Kopley, and Kaustav Banerjee
  152. Statistical Modeling of Metal-Gate Work-Function Variability in Emerging Device Technologies and Implications for Circuit Design
    H. Dadgour, V. De and K. Banerjee
    Nominated for the BEST PAPER AWARD
  153. A Design-Specific and Thermally-Aware Methodology for Trading-off Power and Performance in Leakage-Dominant CMOS Technologies
    Sheng-Chih Lin and Kaustav Banerjee
  154. Current Status and Future Perspectives of Carbon Nanotube Interconnects
    K.Banerjee, H. Li and N. Srivastava
    IEEE EMC Symposium, Detroit, MI, August 18-22, 2008. (INVITED)
  155. Current Status and Future Perspectives of Carbon Nanotube Interconnects
    K. Banerjee, H. Li and N. Srivastava
  156. Carbon Nanotube Interconnects for Next Generation ICs
    K. Banerjee
    Summer School on Nanoelectronic Circuits and Tools, EPFL, Lausanne, Switzerland, July 14-18, 2008
    INVITED
  157. Hybrid NEMS-CMOS Circuits
    K. Banerjee
    IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH’08), June 12-13, 2008, Anaheim, CA Panel: Non-CMOS NanoElectronics – Will it ever be real?
    INVITED PANEL
  158. Analysis and Implications of Parasitic and Screening Effects on the High-Frequency/RF Performance of Tunneling-Carbon Nanotube FETs
    C. Kshirsagar, M. N. El-Zeftawi and K. Banerjee
  159. Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects
    Hong Li, Wen-Yan Yin, Kaustav Banerjee, and Jun-Fa Mao
  160. High-Frequency Effects in Carbon Nanotube Interconnects
    K. Banerjee
    12th IEEE Workshop on Signal Propagation on Interconnects (SPI), Avignon, Pope's Palace, France, May 12-15, 2008
    KEYNOTE
  161. 3D Device Modeling of Damage Due to Filamentation Under an ESD Event in Nanometer Scale Drain Extended NMOS (DE-NMOS)
    A. Chatterjee, S. Pendharkar, H. Gossner, C. Duvvury and K. Banerjee
  162. High-Frequency Mutual Impedance Extraction of VLSI Interconnects in the Presence of a Multi-layer Conducting Substrate
    N. Srivastava, R. Suaya and K. Banerjee
  163. Thermal Challenges of 3-D ICs
    Sheng-Chih Lin and Kaustav Banerjee
    in Wafer Level 3-D ICs Process Technology, Editors: Chuan Seng Tan, Ronald J. Gutmann, L. Rafael Reif, Springer,ISBN: 978-0-387-76532-7, 2008
  164. Cool Chips: Opportunities and Implications for Power and Thermal Management
    Sheng-Chih Lin and Kaustav Banerjee
    HIGHLIGHTED ON THE JOURNAL COVER
  165. Power and Thermal Management in the Nanometer Era
    K. Banerjee
    IEEE CPMT EDAPS, Taipei, Taiwan, December 15-17, 2007
  166. A Fast Semi-numerical Technique for the Solution of the Poisson-Boltzmann Equation in a Cylindrical Nanowire
    A. Ramu, M. P. Anantram and K. Banerjee
  167. Modeling and Analysis of Intrinsic Gate Capacitance for Carbon Nanotube Array Based Devices Considering Variaion in Screening Effect and Diameter
    C. Kshirsagar and K. Banerjee
  168. Performance Analysis of Multi-Walled Carbon Nanotube Based Interconnects
    H. Li, W-Y. Yin, J-F. Mao and K. Banerjee
  169. A Microscopic Understanding of Nanometer Scale DENMOS Failure Mechanism Under ESD Conditions
    A. Chatterjee, S. Pendharkar, Y-Y. Lin, C. Duvvury and K. Banerjee
  170. Modeling and Analysis of Self-Heating in FinFET Devices for Improved Circuit and EOS/ESD Performance
    S. Kolluri, K. Endo, E. Suzuki and K. Banerjee
  171. Carbon Nanotube Vias: A Reality Check
    H. Li, N. Srivastava, J-F. Mao, W-Y. Yin and K. Banerjee
  172. A Self-Consistent Substrate Thermal Profile Estimation Technique for Nanoscale ICs—Part I: Electrothermal Couplings and Full-Chip Package Thermal Model
    Sheng-Chih Lin, Greg Chrysler, Ravi Mahajan, Vivek De and Kaustav Banerjee
  173. A Self-Consistent Substrate Thermal Profile Estimation Technique for Nanoscale ICs—Part II: Implementation and Implications for Power Estimation and Thermal Management
    Sheng-Chih Lin, Greg Chrysler, Ravi Mahajan, Vivek De and Kaustav Banerjee
  174. A Statistical Framework for Estimation of Full-Chip Leakage-Power Distribution under Parameter Variations
    Hamed Dadgour, Sheng-Chih Lin and Kaustav Banerjee
  175. Design and Analysis of Hybrid NEMS-CMOS Circuits for Ultra Low-Power Applications
    H. F. Dadgour and K. Banerjee
  176. Nano-enhanced Architectures: Using Carbon Nanotube Interconnects in Cache Design
    B. Agrawal, N. Srivastava, F. T. Chong, K. Banerjee and T. Sherwood
    4th Workshop on Non-Silicon Computing (NSC-4) held in conjunction with the International Symposium on Computer Architecture (ISCA'07 workshop), San Diego, California, June 2007
  177. An Insight into the High Current ESD Behavior of Drain Extended NMOS (DENMOS) Devices in Nanometer Scale CMOS Technologies
    A. Chatterjee, S. Pendharkar, Y-Y. Lin , C. Duvvury and K. Banerjee
  178. Electrothermal Engineering in the Nanometer Era
    K. Banerjee
    17th ACM Great Lakes Symposium on VLSI (GLSVLSI), Stresa-Lago Maggiore, Italy, March 11-13, 2007
    INVITED TUTORIAL
  179. SoC Communication Architectures: Technology, Current Practice, Research and Trends
    K. Banerjee, L. Benini, N. Dutt, K. Lahiri and S. Pasricha
    VLSI Design Conference, Bangalore, India, Jan. 6-10, 2007
    INVITED TUTORIAL
  180. 3D-Integration for Introspection
    Shashidhar Mysore, Banit Agrawal, Sheng-Chih Lin, Navin Srivastava, Kaustav Banerjee and Timothy Sherwood
  181. Can Carbon Nanotubes Extend the Lifetime of On-Chip VLSI Interconnections?
    K. Banerjee
  182. An Electrothermally-Aware Full-Chip Substrate Temperature Gradient Evaluation Methodology for Leakage Dominant Technologies with Implications for Power Estimation and Hot-Spot Management
    S-C. Lin and K. Banerjee
  183. Power and Thermal Challenges for 65 nm and Below
    K. Banerjee, P. Coteus and V. De
    IEEE International Conference on Computer-Aided Design (ICCAD), San Jose, CA, Nov. 5-9, 2006
    INVITED TUTORIAL
  184. What are Carbon Nanotubes?
    K. Banerjee
    ACM SIGDA Newsletter, Vol. 36, No. 21, Nov. 2006
  185. Introspective 3-D Chips
    S. C. Mysore, B. Agrawal, N. Srivastava, S-C. Lin, K. Banerjee and T. Sherwood
    IEEE MICRO Top Pick
  186. Carbon Nanotubes: An Emerging Alternative for On-Chip VLSI Interconnects
    K. Banerjee
    Future Directions in IC and Package Design Workshop, (FDIP), Scottsdale, AZ, Oct. 22, 2006
  187. Prospects for Carbon Nanotube Interconnects
    K. Banerjee
    23rd Advanced Metallization Conference (AMC), San Diego, CA, Oct. 16-19, 2006
  188. Modeling and Extraction of Nanometer Scale Interconnects: Challenges and Opportunities
    R. Suaya, R. Escovar, S. Ortiz, K. Banerjee and N. Srivastava
    23rd Advanced Metallization Conference, San Diego, CA, Oct. 16-19, 2006 []
  189. Thermal Dissipation in Multilayer Devices
    R. V. Joshi, K. Banerjee, T. Smy, K. Guarini, C.T. Chuang and N. Zamadmar
    23rd Advanced Metallization Conference, San Diego, CA, Oct. 16-19, 2006
  190. Can Carbon Nanotubes Extend the Lifetime of On-Chip Electrical Interconnections?
    K. Banerjee, S. Im and N. Srivastava
    IEEE Conference on Nano Networks (Nano-Net), Lausanne, Switzerland, Sept. 14-16, 2006
  191. A Thermally-Aware Performance Analysis of Vertically Integrated (3-D) Processor-Memory Hierarchy
    G. Loi, B. Agarwal, N. Srivastava, S-C. Lin, T. Sherwood and K. Banerjee
  192. A Novel Variation-Aware Low-Power Keeper Architecture for Wide Fan-in Dynamic Gates
    H. F. Dadgour, R. V. Joshi and K. Banerjee
  193. Are Carbon Nanotubes the Future of VLSI Interconnections?
    K. Banerjee and N. Srivastava
  194. Emerging Interconnect Technologies based on Carbon Nanotubes
    N. Srivastava and K. Banerjee
    IEEE International Symposium on Quality Electronic Design (ISQED), San Jose, CA, March 27-29, 2006
    INVITED TUTORIAL
  195. Electrothermal Engineering in the Nanometer Era: From Devices and Interconnects to Circuits and Systems
    K. Banerjee, S-C. Lin, and N. Srivastava
  196. New Physical Insight and Modeling of Second Breakdown (It2) Phenomenon in Advanced ESD Protection Devices
    A. Chatterjee, C. Duvvury and K. Banerjee
  197. Carbon Nanotube Interconnects: Implications for Performance, Power Dissipation and Thermal Management
    N. Srivastava, R. V. Joshi and K. Banerjee
  198. Analysis and Implications of IC Cooling for Deep Nanometer Scale CMOS Technologies
    S-C. Lin, R. Mahajan, V. De and K. Banerjee
    HIGHLIGHTED PAPER OF IEDM 2005
  199. Scaling Analysis of Multilevel Interconnect Temperatures in High Performance ICs
    Sungjun Im, Navin Srivastava, Kaustav Banerjee and Kenneth E. Goodson
  200. Performance Analysis of Carbon Nanotube Interconnects for VLSI Applications
    N. Srivastava and K. Banerjee
  201. Thermal Scaling Analysis of Multilevel Cu/Low-k Interconnect Structures in Deep Nanometer Scale Technologies
    S. Im, N. Srivastava, K. Banerjee and K. E. Goodson
    Proceedings of the 22nd International VLSI Multilevel Interconnect Conference (VMIC), pp. 525-530, Fremont, CA, October 3-6, 2005
    OUTSTANDING STUDENT PAPER AWARD
  202. A Thermally Aware Methodology for Design-Specific Optimization of Supply and Threshold Voltages in Nanometer Scale ICs
    S-C. Lin, N. Srivastava and K. Banerjee
  203. Thermal Modeling of Bonded SOI/3D ICs
    R. V. Joshi, K. Banerjee, T. Smy, K. Guarini, C. T. Chuang, A. Devgan and N. Zamadmar
    Advanced Metallization Conference (AMC), pp. 25-31, Colorado Springs, CO. Sept. 26-29, 2005
  204. Interconnect Modeling and Analysis in the Nanometer Era: Cu and Beyond
    K. Banerjee, S. Im and N. Srivastava
    Advanced Metallization Conference (AMC), Colorado Springs, CO. Sept. 26-29, 2005 []
  205. Supply and Power Optimization in Leakage Dominant Technologies
    Man Lung Mui, Kaustav Banerjee and Amit Mehrotra
  206. A Probabilistic Framework for Power-Optimal Repeater Insertion for Global Interconnects Under Parameter Variations
    V. Wason and K. Banerjee
    Nominated for the BEST PAPER AWARD
  207. Modeling and Analysis of Non-Uniform Substrate Temperature Effects on Global ULSI Interconnects
    Amir H. Ajami, Kaustav Banerjee and Massoud Pedram
  208. Mechanisms Leading to Erratic Snapback Behavior in Bipolar Junction Transistors with Base Emitter Shorted
    Amitabh Chatterjee, Ronald D. Schrimpf, Sameer Pendharkar and Kaustav Banerjee
  209. Impact of On-Chip Inductance on Power Distribution Network Design for Nanometer Scale Integrated Circuits
    N. Srivastava, X. Qi and K. Banerjee
  210. Scaling Analysis of On-Chip Power Grid Voltage Variations in Nanometer Scale ULSI
    Amir H. Ajami, Kaustav Banerjee and Massoud Pedram
  211. Emerging Nanoelectronics: Life With and After CMOS, Vol. 1,
    Adrian M. Ionescu and Kaustav Banerjee
    Springer (Kluwer), ISBN: 1-4020-7533-2, 622 pp. (2005)
  212. Emerging Nanoelectronics: Life With and After CMOS, Vol. 2
    Adrian M. Ionescu and Kaustav Banerjee
    Springer (Kluwer), ISBN: 1-4020-7915-X, 340 pp. (2005)
  213. Emerging Nanoelectronics: Life With and After CMOS, Vol. 3
    Adrian M. Ionescu and Kaustav Banerjee
    Springer (Kluwer), ISBN: 1-4020-7916-8, 428 pp. (2005)
  214. Analytical Modelling of Single Electron Transistor (SET) for Hybrid CMOS-SET Analog IC Design
    Santanu Mahapatra, Vaibhav Vaish, Christoph Wasshuber, Kaustav Banerjee and Adrian Ionescu
  215. Leakage and Variation Aware Thermal Management of Nanometer Scale ICs
    K. Banerjee, S-C. Lin, and V. Wason
    Proceedings of the IMAPS-Advanced Technology Workshop on Thermal Management, Oct. 25-27, Palo Alto, CA, 2004 []
  216. Interconnect Challenges for Nanoscale Electronic Circuits
    Navin Srivastava and Kaustav Banerjee
    TMS Journal of Materials (JOM), Special Issue on Nanoelectronics, Vol. 56, No. 10, pp. 30-31, October 2004 []
    INVITED
  217. Nanometer Scale Interconnect Challenges
    K. Banerjee
    State-Of-The-Art Seminar, 21st International VLSI Multilevel Interconnection Conference (VMIC), Hawaii, Sept. 29-Oct. 2, 2004
  218. A Comparative Scaling Analysis of Metallic and Carbon Nanotube Interconnections for Nanometer Scale VLSI Technologies
    N. Srivastava and K. Banerjee
    Proceedings of the 21st International VLSI Multilevel Interconnect Conference (VMIC), pp. 393-398, Hawaii, Sept. 29-Oct. 2, 2004 []
  219. A Probabilistic Framework to Estimate Full-Chip Subthreshold Leakage Power Distribution Considering Within-Die and Die-to-Die P-T-V Variations
    S. Zhang, V. Wason and K. Banerjee
  220. Simultaneous Optimization of Supply and Threshold Voltages for Low-Power and High-Performance Circuits in the Leakage Dominant Era
    A. Basu, S-C. Lin, V. Wason, A. Mehrotra and K. Banerjee
  221. Modeling Techniques and Verification Methodologies for Substrate Coupling Effects in Mixed-Signal System-on-Chip Designs
    Adil Koukab, Kaustav Banerjee and Michel Declercq
  222. Impact of Off-state Leakage Current on Electromigration Design Rules for Nanometer Scale CMOS Technologies
    S-C. Lin, A. Basu, A. Keshavarzi, V. De and K. Banerjee
    IEEE Annual International Reliability Physics Symposium (IRPS), pp. 74-78, Phoenix, AZ, April 25-29, 2004
  223. A Comprehensive Analytical Capacitance Model of a Two Dimensional Nanodot Array
    A. Basu, S-C. Lin, C. Wasshuber, A. Ionescu and K. Banerjee
  224. Power Supply Optimization in Sub-130 nm Leakage Dominant Technologies
    Man L Mui, K. Banerjee and A. Mehrotra
  225. A Global Interconnect Optimization Scheme for Nanometer Scale VLSI with Implications for Latency, Bandwidth and Power Dissipation
    Man Lung Mui, Kaustav Banerjee and Amit Mehrotra
  226. 3D ICs DSM Interconnect Performance Modeling and Analysis
    S. Souri, T-Y. Chiang, P. Kapur, K. Banerjee and K. C. Saraswat
    in Interconnect Technology and Design for Gigascale Integration, Editors: Jeffrey A. Davis and James D. Meindl, Springer, ISBN: 1-4020-7606-1, 2003
  227. A Self-Consistent Junction Temperature Estimation Methodology for Nanometer Scale ICs with Implications for Performance and Thermal Management
    K. Banerjee, S-C. Lin, A. Keshavarzi, S. Narendra and V. De
  228. SETMOS: A Novel True Hybrid SET-CMOS High Current Coulomb Blockade Oscillation Cell for Future Nano-Scale Analog ICs
    S. Mahapatra, V. Pott, S. Ecoffey, A. Schmid, C. Wasshuber, J. W. Tringe, Y. Leblebici, M. Declercq, K. Banerjee and A. M. Ionescu
  229. Nano, Quantum, and Molecular Computing: Are we Ready for the Validation and Test Challenges?
    S. K. Shukla, R. Karri, S. C. Goldstein, F. Brewer, K. Banerjee, and S. Basu
    INVITED
  230. A CAD Framework for Co-Design and Analysis of CMOS-SET Hybrid Integrated Circuits
    S. Mahapatra, K. Banerjee, F. Pegeon, and A. M. Ionescu
  231. Nanometer Scale Issues for On-Chip Interconnections
    K. Banerjee
    IUMRS-ICAM, Symposium B-1, Si-LSI-Related Materials, Processes and Characterization Technology, Yokohama, Japan, October 8-13, 2003
    INVITED
  232. Thermal Issues in Designing Nanometer Scale Interconnects
    K. Banerjee
    20th International VLSI Multilevel Interconnection Conference (VMIC), Marina Del Rey, CA, September 22-25, 2003
    INVITED
  233. A SET Quantizer Circuit Aiming at Digital Communication System
    S. Mahapatra, A. M. Ionescu, K. Banerjee and M. J. Declercq
  234. Teaching Microelectronics in the Silicon ICs Showstopper Zone: A Course on Ultimate Devices and Circuits: Towards Quantum Electronics
    A. M. Ionescu, M. J. Declercq, K. Banerjee and S. Mahapatra
    4th European Workshop on Microelectronics Education (EWME), Baiona, Mancomunidad de Vigo, Spain, May 23-24, 2003 []
  235. An Interconnect Scaling Scheme with Constant On-Chip Inductive Effects
    Kaustav Banerjee and Amit Mehrotra
  236. Modeling of Temperature Dependent Contact Resistance for Analysis of ESD Reliability
    K-H. Oh, J-H. Chun, K. Banerjee, C. Duvvury, and R. W. Dutton
  237. Analysis of IR-Drop Scaling with Implications for Deep Submicron P/G Network Designs
    A. H. Ajami, K. Banerjee, A. Mehrotra and M. Pedram
  238. Non-uniform Conduction Induced Reverse Channel Length Dependence of ESD Reliability for Silicided NMOS Transistors
    K-H. Oh, K. Banerjee, C. Duvvury and R. W. Dutton
  239. Via Design and Scaling Strategy for Nanometer Scale Interconnect Technologies
    S. Im, K. Banerjee and K. E. Goodson
  240. Analysis of Nonuniform ESD Current Distribution in Deep Submicron NMOS Transistors
    Kwang-Hoon Oh, Charvaka Duvvury, Kaustav Banerjee and Robert W. Dutton
  241. Impact of Gate-to-Contact Spacing on ESD Performance of Salicided Deep Submicron NMOS Transistors
    Kwang-Hoon Oh, Charvaka Duvvury, Kaustav Banerjee and Robert W. Dutton
  242. Modeling and Analysis of Power Dissipation in Single Electron Logic
    S. Mahapatra, A. M. Ionescu, K. Banerjee and M. J. Declercq
  243. Analysis and Optimization of Substrate Noise Coupling in Single-Chip RF Transceiver Design
    A. Koukab, K. Banerjee, and M. Declercq
  244. A Power-Optimal Repeater Insertion Methodology for Global Interconnects in Nanometer Designs
    Kaustav Banerjee and Amit Mehrotra
  245. Quasi-Analytical Modeling of Drain Current and Conductance of Single Electron Transistors with MIB
    S. Mahapatra, A. M. Ionescu and K. Banerjee
  246. Analysis and Design of Distributed ESD Protection Circuits for High-Speed Mixed-Signal and RF ICs
    Choshu Ito, Kaustav Banerjee and Robert W. Dutton
  247. Analysis of On-Chip Inductance Effects for Distributed RLC Interconnects
    Kaustav Banerjee and Amit Mehrotra
  248. Power Dissipation Issues in Interconnect Performance Optimization for Sub-180 nm Designs
    K. Banerjee and A. Mehrotra
  249. Few Electron Devices: Towards Hybrid CMOS-SET Integrated Circuits
    M. Ionescu, M. J. Declercq, S. Mahapatra, K. Banerjee and J. Gautier
    INVITED
  250. A Quasi-Analytical SET Model for Few Electron Circuit Simulation
    Santanu Mahapatra, Adrian Mihai Ionescu and Kaustav Banerjee
  251. Analysis of Gate-Bias-Induced Heating Effects in Deep-Submicron ESD Protection Designs
    Kwang-Hoon Oh, Charvaka Duvvury, Kaustav Banerjee and Robert W. Dutton
  252. SET-based Quantiser Circuit for Digital Communications
    Santanu Mahapatra, Adrian Mihai Ionescu, Kaustav Banerjee and Michel Declercq
  253. Modeling and Analysis of Via Hot Spots and Implications for ULSI Interconnect Reliability
    S. Im, K. Banerjee and K. E. Goodson
  254. Investigation of Gate to Contact Spacing Effect on ESD Robustness of Salicided Deep Submicron Single Finger NMOS Transistors
    K-H. Oh, C. Duvvury, K. Banerjee and R. W. Dutton
  255. Inductance Aware Interconnect Scaling
    Inductance Aware Interconnect Scaling
  256. Modeling and Design of a Low-Voltage SOI Suspended-Gate MOSFET (SG-MOSFET) with a Metal Over-Gate-Architecture
    A. M. Ionescu, V. Pott, R. Fritschi, K. Banerjee, M. J. Declercq, Ph. Renaud, C. Hibert, Ph. Fluckiger and G-A. Racine
  257. 3-D Integrable Optoelectronic Devices for Telecommunications ICs
    P. Dainesi, A. M. Ionescu, L. Thevenaz, K. Banerjee, M. J. Declercq, Ph. Robert, Ph. Renaud, Ph. Fluckiger, C. Hibert and G-A. Racine
  258. Analytical Thermal Model for Multilevel VLSI Interconnects Incorporating Via Effect
    Ting-Yen Chiang, Kaustav Banerjee and Krishna C. Saraswat
  259. Localized Heating Effects and Scaling of Sub-0.18 Micron CMOS Devices
    E. Pop, K. Banerjee, P. Sverdrup, R. Dutton and K. Goodson
  260. Gate Bias Induced Heating Effect and Implications for the Design of Deep Submicron ESD Protection
    K-H. Oh, C. Duvvury, K. Banerjee and R. W. Dutton
  261. Compact Modeling and SPICE-Based Simulation for Electrothermal Analysis of Multilevel ULSI Interconnects
    T-Y. Chiang, K. Banerjee and K. C. Saraswat
  262. Coupled Analysis of Electromigration Reliability and Performance in ULSI Signal Nets
    K. Banerjee and A. Mehrotra
  263. Analysis of Substrate Thermal Gradient Effects on Optimal Buffer Insertion
    A. H. Ajami, K. Banerjee and M. Pedram
  264. Interconnect Reliability under ESD Conditions: Physics, Models and Design Guidelines
    K. Banerjee
    23rd Annual EOS/ESD Symposium, pp. 191, Portland, Oregon, September 9-13, 2001 []
  265. Analysis and Optimization of Distributed ESD Protection Circuits for High-Speed Mixed Signal and RF Applications
    C. Ito, K. Banerjee and R. W. Dutton
  266. Global (Interconnect) Warming
    Kuastav Banerjee and Amit Mehrotra
    INVITED
  267. Analysis of On-Chip Inductance Effects using a Novel Performance Optimization Methodology RT-Distributed RLC Interconnects
    K. Banerjee and A. Mehrotra
    BEST PAPER AWARD
  268. Analysis of Non-Uniform Temperature-Dependent Interconnect Performance in High Performance ICs
    A. H. Ajami, K. Banerjee, M. Pedram, and L.P.P.P. van Ginneken
  269. Accurate Analysis of On-Chip Inductance Effects and Implications for Optimal Repeater Insertion and Technology Scaling
    K. Banerjee and A. Mehrotra
  270. Non-Uniform Chip-Temperature Dependent Signal Integrity
    A. H. Ajami, K. Banerjee and M. Pedram
  271. A New Analytical Thermal Model for Multilevel VLSI Interconnects Incorporating Via Effects
    T-Y Chiang, K. Banerjee and K. C. Saraswat
  272. RF LDMOS Characterization and Its Compact Modeling
    J. Jang, O. Tornblad, T. Arnborg, Q. Chen, K. Banerjee, Z. Yu and R. W. Dutton
  273. 3-D Heterogeneous ICs: A Technology for the Next Decade and Beyond
    K. Banerjee, S. J. Souri, P. Kapur and K. C. Saraswat
    5th IEEE Workshop on Signal Propagation on Interconnects, Venice, Italy, May 13-16, 2001 []
  274. A Fast Analytical Technique for Estimating the Bounds of On-Chip Clock Wire Inductance
    Y-C. Lu, K. Banerjee, M. Celik and R. W. Dutton
  275. Effects of Non-Uniform Substrate Temperature on the Clock Signal Integrity in High Performance Designs
    A. H. Ajami, M. Pedrarn and K. Banerjee
  276. 3-D ICs: A Novel Chip Design for Improving Deep Submicrometer Interconnect Performance and Systems-on-Chip Integration
    Kaustav Banerjee, Shukri J. Souri, Pawan Kapur, and Krishna C. Saraswat
    INVITED
  277. Non-uniform Bipolar Conduction in Single Finger NMOS Transistors and Implications for Deep Submicron ESD Design
    K-H. Oh, C. Duvvury, C. Salling, K. Banerjee, and R. W. Dutton
  278. Analysis and Optimization of Thermal Issues in High-Performance VLSI
    K. Banerjee, M. Pedram and A. H. Ajami
    INVITED
  279. Analysis and Design of ESD Protection Circuits for High-Frequency/RF Applications
    C. Ito, K. Banerjee and R. W. Dutton
  280. Trends for ULSI Interconnections and Their Implications for Thermal, Reliability and Performance Issues
    K. Banerjee
    Seventh International Dielectrics and Conductors for ULSI Multilevel Interconnection Conference (DCMIC), pp. 38-50, Santa Clara, CA, March 5-9, 2001 []
    INVITED
  281. Interconnect Limits on Gigascale Integration (GSI) in the 21st Century
    Jeffrey A. Davis, Raguraman Venkatesan, Alain Kaloyeros, Michael Beylansky, Shukri J. Souri, Kaustav Banerjee, Krishna C. Saraswat, Arifur Rahman, Rafael Reif, and James. D. Meindl
    Proceedings of the IEEE, Special Issue on Limits of Semiconductor Technology, Vol. 89, No. 3, pp. 305- 324, March 2001 []
    INVITED
  282. Effect of Via Separation and Low-k Dielectric Materials on the Thermal Characteristics of Cu Interconnects
    T-Y. Chiang, K. Banerjee, K. C. Saraswat
  283. Full Chip Thermal Analysis of Planar (2-D) and Vertically Integrated (3-D) High Performance ICs
    S. Im and K. Banerjee
  284. Thermal Effects in ULSI Interconnects
    K. Banerjee
    Fabless Semiconductor Association (FSA) Design Modeling Workshop, Santa Clara, CA, Oct. 11-12, 2000
    INVITED TUTORIAL
  285. Advanced Electro-Thermal Modeling and Simulation Techniques for Deep Sub-Micron Devices
    P. G. Sverdrup, O. Tornblad, K. Banerjee, D. Yergeau, Z. Yu, R. W. Dutton, and K. E. Goodson
    Proceedings of TECHCON, Phoenix, AZ, Sept. 21-23, 2000
  286. 3-D ICs: Motivation, Performance Analysis, and Technology
    K. C. Saraswat, K. Banerjee, A. R. Joshi, P. Kalavade, P. Kapur, and S. J. Souri
    Proc. 26th European Solid-State Circuits Conference (ESSCIRC &lsquo;2000), Stockholm, Sweden, Sept. 19 - 21, 2000
    INVITED
  287. Sub-Continuum Thermal Simulations of Deep Sub-micron Devices under ESD Conditions
    P. G. Sverdrup, K. Banerjee, C. Dai, W. Shih, R. W. Dutton, and K. E. Goodson
  288. Multiple Si Layer ICs: Motivation, Performance Analysis, and Design Implications
    S. J. Souri, K. Banerjee, A. Mehrotra, and K. C. Saraswat
  289. 3-D lCs with Multiple Si Layers: Performance Analysis, and Technology
    K. C. Saraswat, K. Banerjee, A. Joshi. P. Kalavade, S. J. Souri, and V. Subramanian
    197th Meeting of The Electrochemical Society, Toronto, May 14-18, 2000
    INVITED
  290. Thermal Characteristics of Sub-Micron Vias Studied by Scanning Joule Expansion Microscopy
    Masanobu Igeta, Kaustav Banerjee, Guanghua Wu, Chenming Hu, and Arun Majumdar
  291. Process and Layout Dependent Substrate Resistance Modeling for Deep Sub-Micron ESD Protection Devices
    X. Y. Zhang, K. Banerjee, A. Amerasekera, V. Gupta, Z. Yu, and R. W. Dutton
  292. Quantitative Projections of Reliability and Performance for Low-k/Cu Interconnect Systems
    K. Banerjee, A. Mehrotra, W. Hunter, K. C. Saraswat, K. E. Goodson, and S. S. Wong
  293. Microanalysis of VLSI Interconnect Failure Modes under Short-pulse Stress Conditions
    K. Banerjee, D. Y. Kim, A. Amerasekera, C. Hu, S. S. Wong, and K. E. Goodson
  294. Performance Analysis and Technology of 3-D ICs
    K. C. Saraswat, S. J. Souri, K. Banerjee, P. Kapur
    ACM International Workshop on System Level Interconnect Prediction (SLIP), pp. 85-90, San Diego, CA, April 8-9, 2000
    INVITED
  295. Thermal Effects in Deep Sub-Micron VLSI Interconnects
    Kaustav Banerjee
    IEEE International Symposium on Quality Electronic Design (ISQED), San Jose, CA, March 20-22, 2000
    INVITED TUTORIAL
  296. Thermal Effects in Deep Sub-micron VLSI Interconnects and Implications for Reliability and Performance
    Kaustav Banerjee
    Electronics Research Laboratory, Memorandum no. UCB/ERL M99/48, September 22, 1999
  297. On Thermal Effects in Deep Sub-Micron VLSI Interconnects
    K. Banerjee, A. Mehrotra, A. Sangiovanni-Vincentelli, and C. Hu
  298. Investigation of Self-Heating Phenomenon in Small Geometry Vias Using Scanning Joule-Expansion Microscopy
    K. Banerjee, G. Wu, M. Igeta, A. Amerasekera, A. Majumdar, and C. Hu
  299. Comparison of E and 1/E TDDB Model for Si02 under Long-Term/Low-Field Test Conditions
    J.W. McPherson, V. Reddy, K. Banerjee, and H. Le
  300. A New Quantitative Model for Deep Submicron Contact Resistance
    K. Banerjee, A. Amerasekara, G. Dixit, and C. Hu
    Proceedings of the TECHON, Las Vegas, NV, 1998
  301. Thermal Effects in Interconnects
    W. Hunter, W-Y. Shih and K. Banerjee
    IEEE Annual International Reliability Physics Symposium (IRPS), Reno, NV, March 30 - April 2, 1998
    INVITED TUTORIAL
  302. High Current Effects in Silicide films for Sub-0.25 micron VLSI Technologies
    K. Banerjee, A. Amerasekera, J. A. Kittl, and C. Hu
  303. Characterization of Self-Heating in Advanced VLSI Interconnect Lines Based on Thermal Finite Element Simulation
    Sven Rzepka, Kaustav Banerjee, Ekkehard Meusel, and Chenming Hu
  304. Temperature and Current Effects on Small-Geometry-Contact Resistance
    K. Banerjee, A. Amerasekera, G. Dixit, and C. Hu
  305. High Current Effects in Metal Interconnects
    K. Banerjee, A. Amerasekera, G. Dixit, and C. Hu
    Proceedings of the SRC Topical Research Conference on Reliability, Vanderbilt University, Nashville, Oct. 21-22, 1997
    INVITED
  306. Characterization of Self-Heating in Advanced VLSI Interconnect Lines Based on Thermal Finite Element Simulation
    S. Rzepka, K. Banerjee, E. Meusel, and C. Hu
    3rd International Workshop on Thermal Investigations of ICs and Microstructures (THERMINIC), pp. 108-113, Cannes / Cote d'Azur, France, Sept. 21-23, 1997
  307. High-Current Failure Model for VLSI Interconnects Under Short-PuIse Stress Conditions
    Kaustav Banerjee, Ajith Amerasekera, Nathan Cheung, and Chenming Hu
  308. Characterization of Contact and Via Failure under Short Duration High Pulsed Current Stress
    K. Banerjee, A. Amerasekera, G. Dixit, N. Cheung, and C. Hu
  309. Failure Mechanisms of Multi Layered Thin Film Metal Interconnects under a High Current Pulse
    K. Banerjee, A. Amerasekera, N. Cheung, and C. Hu
    MRS Spring Symp., San Francisco, CA, March 31-April 4, 1997
  310. The Effect of Interconnect Scaling and Low-k Dielectric on the Thermal Characteristics of the IC Metal
    K. Banerjee, A. Amerasekera, G. Dixit, and C. Hu
  311. The Dependence of W-plug Via EM Performance on Via Size
    Huy A. Le, Kaustav Banerjee, and Joe W. McPherson
  312. Thermal Analysis of the Fusion Limits of Metal Interconnect under Short Duration Current Pulses
    K. Banerjee, S. Rzepka, A. Amerasekera, N. Cheung, and C. Hu
  313. Characterization and Simulation of Self Heating in a Multi Level VLSI Interconnect System under DC and Pulsed Current Conditions
    K. Banerjee, S. Rzepka, A. Amerasekera, and C. Hu
    Proceedings of the SRC TECHCON, Phoenix, AZ, Sept. 1996
  314. Impact of High Current Stress Conditions on VLSI Interconnect Electromigration Reliability Evaluation
    K. Banerjee, L. Ting, N. Cheung, and C. Hu
    Proceedings of the Thirteenth International VLSI Multilevel Interconnection Conference (VMIC), pp. 289- 294, Santa Clara, CA, June 18-20, 1996
  315. Characterization of VLSI Circuit Interconnect Heating and Failure under ESD Conditions
    K. Banerjee, A. Amerasekera, and C. Hu