NRL News

February 1, 2016

Realizing good electrical contacts is critical to harnessing the full potential of emerging two-dimensional materials including graphene and various transition metal dichalcogenides for electronics, optoelectronics, and spintronics applications. The study examines the nature of such contacts and illuminates pathways to optimizing the injection of both charge and spin into atomically-thin semiconductors.

December 3, 2015

The fundamentally new transistor employs atomically-thin semiconducting channel material and quantum mechanical tunneling, operates at a supply voltage of only 0.1 V with high ON/OFF current ratio, and lowers power dissipation by over 90% compared to the state-of-the-art silicon transistors.

November 6, 2015

The award selection committee credited the paper for being judged the most influential on research and industrial practice in computer-aided design of integrated circuits over the ten years since its original appearance at ICCAD.

October 27, 2015

Selection to this kind of “IEDM Hall of Fame” is significant because for over 60 years, IEDM has been the world’s leading forum for reporting innovation, discovery, and breakthroughs in electron device technology.

April 13, 2015

Banerjee one of only 60 engineers selected by the National Academy of Engineering to attend its prestigious German-American Frontiers of Engineering (GAFOE) Symposium in Potsdam, Germany, from April 16-18.

April 2, 2015

Researchers from ECE’s Nanoelectronics Research Lab (NRL) have recently released the first physics-based SPICE compatible compact model for 2D material based transistors in collaboration with NEEDS deployed on nanoHUB.org.