Selection to this kind of “IEDM Hall of Fame” is significant because for over 60 years, IEDM has been the world’s leading forum for reporting innovation, discovery, and breakthroughs in electron device technology.
Banerjee one of only 60 engineers selected by the National Academy of Engineering to attend its prestigious German-American Frontiers of Engineering (GAFOE) Symposium in Potsdam, Germany, from April 16-18.
Researchers from ECE’s Nanoelectronics Research Lab (NRL) have recently released the first physics-based SPICE compatible compact model for 2D material based transistors in collaboration with NEEDS deployed on nanoHUB.org.
UC Santa Barbara researchers demonstrate atomically thin, ultrasensitive and scalable molybdenum disulfide field-effect transistor based biosensors and establish their potential for single-molecule detection.
